GB1463648A - Film growth process - Google Patents

Film growth process

Info

Publication number
GB1463648A
GB1463648A GB2286875A GB2286875A GB1463648A GB 1463648 A GB1463648 A GB 1463648A GB 2286875 A GB2286875 A GB 2286875A GB 2286875 A GB2286875 A GB 2286875A GB 1463648 A GB1463648 A GB 1463648A
Authority
GB
United Kingdom
Prior art keywords
growth
melt
garnet
furnace
orthoferrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2286875A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1463648A publication Critical patent/GB1463648A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1463648 Garnet films INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [29 Oct 1974] 22868/75 Heading C1J [Also in Division B1] Garnet films, suitable for bubble domain devices, are grown by isothermal epitaxial growth on a substrate from a fluxed melt containing orthoferrite crystals but which are prevented from reaching the substrate during the growth, the melt being saturated with respect to orthoferrite and supersaturated with respect to garnets, and the melt being replenished with garnet constituents by reheating after each film growth. Suitable apparatus, as shown in Fig. 5a, comprises a resistance furnace 20, a platinum boat 30 in which the flux growth occurs, a platinum mesh screen 34 to separate the boat into a nutrient region 36 and a growth region 38 and a substrate holder 40 for substrates 42. In operation garnet constituents are placed in the nutrient region 36 of the boat and the solvent ingredients added, the furnace tipped so that the substrate is free from solvent and the temperature of the furnace raised to dissolve the garnet constituents at about 300‹ C. above the growth temperature. The melt is then cooled slowly to the growth temperature whereupon orthoferrite crystallises out of the melt. The furnace is then tipped to flow the melt solution 46 over the substrates and as the melt is supersaturated with respect to garnet epitaxial growth occurs, the orthoferrites crystals being prevented from reaching the growth region 38 by the screen 34. After completion of growth the furnace is tilted back and the melt reheated to dissolve the orthoferrite crystals, thus replenishing the garnet nutrient ready for further growth on new substrates. The growth of the Eu Y iron garnets is referred to in examples.
GB2286875A 1974-10-29 1975-05-23 Film growth process Expired GB1463648A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51883174A 1974-10-29 1974-10-29

Publications (1)

Publication Number Publication Date
GB1463648A true GB1463648A (en) 1977-02-02

Family

ID=24065695

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2286875A Expired GB1463648A (en) 1974-10-29 1975-05-23 Film growth process

Country Status (6)

Country Link
JP (1) JPS546033B2 (en)
CA (1) CA1055818A (en)
DE (1) DE2541140A1 (en)
FR (1) FR2289235A1 (en)
GB (1) GB1463648A (en)
IT (1) IT1042727B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154262U (en) * 1982-04-12 1983-10-15 株式会社日立製作所 elevator control panel
JPS60124724A (en) * 1983-12-12 1985-07-03 Hitachi Ltd Touch panel input device
JPS60167024A (en) * 1984-02-08 1985-08-30 Omron Tateisi Electronics Co Key input device equipped with touch panel
DE3731010A1 (en) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Process for liquid-phase epitaxy
JPH01320520A (en) * 1988-06-23 1989-12-26 Toshiba Corp Method for controlling input of touch screen device
JPH07168669A (en) * 1994-12-02 1995-07-04 Hitachi Ltd Touch panel input device
DE10241703A1 (en) * 2002-09-09 2004-03-18 Vishay Semiconductor Gmbh Reactor for carrying liquid phase epitaxial growth on semiconductor substrates comprises a growing chamber having an intermediate storage region for temporarily storing melts and a growing region for holding a substrate

Also Published As

Publication number Publication date
FR2289235B1 (en) 1977-07-22
JPS546033B2 (en) 1979-03-23
JPS5165085A (en) 1976-06-05
DE2541140A1 (en) 1976-05-13
CA1055818A (en) 1979-06-05
IT1042727B (en) 1980-01-30
FR2289235A1 (en) 1976-05-28

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee