JPS6454719A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS6454719A JPS6454719A JP62211654A JP21165487A JPS6454719A JP S6454719 A JPS6454719 A JP S6454719A JP 62211654 A JP62211654 A JP 62211654A JP 21165487 A JP21165487 A JP 21165487A JP S6454719 A JPS6454719 A JP S6454719A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- ratio
- rare earth
- earth elements
- components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
PURPOSE:To control the saturation temperature of a melt and a composition ratio in a growing crystal freely by respectively bringing the ratio of components of rare earth elements to the heated and molten melt and the ratio of components of rare earth elements to flux to specific values. CONSTITUTION:A crucible 4 is arranged into a core tube 2 on which a heater 1 is wound. A melt 5 in which lead oxide-boron oxide group flux is added to a magnetic garnet material composed of the oxide of rare earth elements and the oxide of iron at a desired composition ratio is admitted into the crucible 4, and heated by a heater 1. A Gd.Ga.garnet substrate 8 is dipped into the melt 5, and a magnetic garnet film 9 is grown onto the substrate 8. The conditions of Rx>=0.0048 and Ry>=0.0055 are kept at the ratio of components Rx of rare earth elements to the melt 5 and the ratio of components Ry of rare earth elements to flux at that time. Accordingly, the saturation temperature of the melt and a composition ratio in a growing crystal can be controlled freely while crystal defects such as pits, precipitation, etc., can be removed completely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62211654A JPS6454719A (en) | 1987-08-26 | 1987-08-26 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62211654A JPS6454719A (en) | 1987-08-26 | 1987-08-26 | Liquid phase epitaxial growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6454719A true JPS6454719A (en) | 1989-03-02 |
Family
ID=16609376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62211654A Pending JPS6454719A (en) | 1987-08-26 | 1987-08-26 | Liquid phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6454719A (en) |
-
1987
- 1987-08-26 JP JP62211654A patent/JPS6454719A/en active Pending
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