GB839783A - Improvements in growth of uniform composition semi-conductor crystals - Google Patents

Improvements in growth of uniform composition semi-conductor crystals

Info

Publication number
GB839783A
GB839783A GB20666/57A GB2066657A GB839783A GB 839783 A GB839783 A GB 839783A GB 20666/57 A GB20666/57 A GB 20666/57A GB 2066657 A GB2066657 A GB 2066657A GB 839783 A GB839783 A GB 839783A
Authority
GB
United Kingdom
Prior art keywords
molten zone
coils
constant
segregation coefficient
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20666/57A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB839783A publication Critical patent/GB839783A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0839783/III/1> In a method of growing a single crystal of silicon or germanium having a constant concentration of electrically significant activator impurities therein, the material 29 is placed in a crucible 8 and melted by energizing induction heating coils 27 and 28, the temperature is then lowered so that the material solidifies but remains plastic, the power to the coils 27 and 28 is then increased until a molten zone 30 appears, coil 27 having more turns than coil 28, and a seed crystal 32 is then dipped into the molten zone 30 and raised to grow a single crystal 31, the molten zone being replenished from the unmelted portion by progressively lowering coils 27 and 28. Impurity material having a segregation coefficient below unity is added to the molten zone 30, or may already be present in the material 29. When the segregation coefficient is below 0.1 the coils 27 and 28 are lowered at such a rate that the volume of the molten zone 30 is constant, but when the segregation coefficient is above 0.1 the volume of the molten zone is progressively decreased to maintain the concentration of the impurity in the molten zone constant. In examples single crystals of germanium containing antimony, arsenic, phosphorus, indium, aluminium and gallium, and single crystals of silicon containing antimony, aluminium, gallium, and indium, are prepared.
GB20666/57A 1956-07-02 1957-07-01 Improvements in growth of uniform composition semi-conductor crystals Expired GB839783A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US595503A US2904512A (en) 1956-07-02 1956-07-02 Growth of uniform composition semiconductor crystals

Publications (1)

Publication Number Publication Date
GB839783A true GB839783A (en) 1960-06-29

Family

ID=24383491

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20666/57A Expired GB839783A (en) 1956-07-02 1957-07-01 Improvements in growth of uniform composition semi-conductor crystals

Country Status (5)

Country Link
US (1) US2904512A (en)
DE (1) DE1034772B (en)
FR (1) FR1180064A (en)
GB (1) GB839783A (en)
NL (2) NL98843C (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1194158B (en) * 1958-10-04 1965-06-03 Telefunken Patent Method and device for producing a semiconductor crystal, in particular from germanium, with a high dislocation density
NL246541A (en) * 1959-01-20
GB898872A (en) * 1959-08-14 1962-06-14 Ici Ltd Improvements in the manufacture of crystalline silicon
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
NL258297A (en) * 1959-12-03
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
US3404966A (en) * 1964-09-04 1968-10-08 Northeru Electric Company Ltd Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
DE1519867A1 (en) * 1965-02-27 1970-02-26 Siemens Ag Device for zone melting in a vacuum
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
US3452549A (en) * 1966-03-28 1969-07-01 Us Army Method for producing predetermined crystal structures
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
DE2338338C3 (en) * 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for doping during crucible-free zone melting of a semiconductor crystal rod
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution
DE3437524A1 (en) * 1984-10-12 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Process for producing a silicon semiconductor bar doped with indium or bismuth
DE4204777A1 (en) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Zonal single crystal growth with increased temp. gradient control - uses heat screens and sepd. heater elements to control and alter the solid-liq. interface position
JPH0680495A (en) * 1992-06-16 1994-03-22 Sumitomo Metal Ind Ltd Method for crystal growth
JPH06279170A (en) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp Production of single crystal and its device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
BE503719A (en) * 1950-06-15
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon

Also Published As

Publication number Publication date
DE1034772B (en) 1958-07-24
FR1180064A (en) 1959-06-01
US2904512A (en) 1959-09-15
NL98843C (en)
NL218610A (en)

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