GB813841A - Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals - Google Patents

Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals

Info

Publication number
GB813841A
GB813841A GB1283/56A GB128356A GB813841A GB 813841 A GB813841 A GB 813841A GB 1283/56 A GB1283/56 A GB 1283/56A GB 128356 A GB128356 A GB 128356A GB 813841 A GB813841 A GB 813841A
Authority
GB
United Kingdom
Prior art keywords
crystal
melt
stage
impurities
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1283/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB813841A publication Critical patent/GB813841A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C11/00—Synchronisation of independently-driven clocks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

In a process for producing zones having different impurity concentrations in a semiconductor crystal by varying between a first stage and a second stage the rate at which the crystal is grown from a melt containing a mixture of donor and acceptor impurities, at least one intermediate stage is interposed between the first and second stages, during which intermediate stage a portion of the crystal which has already solidified is remelted. The crystal is grown either by drawing a seed from a melt in a crucible, or by moving a molten zone along a rod of material, and the withdrawal of the seed or the movement of the molten zone is halted and/or reversed in the intermediate stage to re-melt a portion of the crystal. The crystal may be grown at a high rate in the first stage, then at a negative rate, i.e. a part of the crystal is melted, in an intermediate stage, then in another intermediate stage growth is suspended while equalization of temperatures within the melt is reached, followed by growth at a slower rate in the second stage. The temperature of the melt may be changed in synchronism with the variations in the growing rate by changing the strength and/or the direction of an electric current flowing between the crystal and the melt (Peltier effect), either instead of or in addition to, external temperature control of the melt. The material may be germanium and the added impurities may be antimony and gallium or indium, p-n junctions being obtained by variation in the proportion of donor and acceptor impurities introduced in the crystal by variation in its rate of growth. The impurities may be introduced in the same quantity into the crystal to obtain an intrinsic region between p- and n-regions. A steady change from high to low impurity concentration in a region may also be obtained. The impurities may be added to the melt in a crucible, or distributed throughout a rod when zone-melting is employed; impurities may also be introduced from the atmosphere in which the process is carried out.
GB1283/56A 1955-01-13 1956-01-13 Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals Expired GB813841A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES42354A DE1105621B (en) 1955-01-13 1955-01-13 Process for influencing the crystallization from a melt of semiconductor base material according to the step drawing process using the Peltier effect
DE347579X 1955-01-13

Publications (1)

Publication Number Publication Date
GB813841A true GB813841A (en) 1959-05-27

Family

ID=39187020

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1283/56A Expired GB813841A (en) 1955-01-13 1956-01-13 Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals

Country Status (4)

Country Link
CH (1) CH347579A (en)
DE (2) DE1105621B (en)
GB (1) GB813841A (en)
NL (1) NL105554C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
NL247569A (en) * 1959-01-22
NL301226A (en) * 1962-12-03
DE1262978B (en) * 1965-01-05 1968-03-14 Siemens Ag Method for producing a semiconductor single crystal
DE1297584B (en) * 1965-02-02 1969-06-19 Akademie D Wissenschaften Berl Method for crucible-free zone melting of a semiconductor rod
DE1282612B (en) * 1965-08-26 1968-11-14 Halbleiterwerk Frankfurt Oder Process for the homogenization of dopants in semiconductor single crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514119A (en) * 1951-09-13

Also Published As

Publication number Publication date
DE1105621B (en) 1961-04-27
NL105554C (en)
CH347579A (en) 1960-07-15
DE964708C (en) 1957-05-29

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