GB871839A - Improvements in or relating to processes for the production of semiconductive bodies - Google Patents

Improvements in or relating to processes for the production of semiconductive bodies

Info

Publication number
GB871839A
GB871839A GB20207/58A GB2020758A GB871839A GB 871839 A GB871839 A GB 871839A GB 20207/58 A GB20207/58 A GB 20207/58A GB 2020758 A GB2020758 A GB 2020758A GB 871839 A GB871839 A GB 871839A
Authority
GB
United Kingdom
Prior art keywords
solute
melt
ratio
solutes
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20207/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB871839A publication Critical patent/GB871839A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A method of producing a semiconductor body of uniform resistivity suitable for use in transistors and rectifiers comprises crystallizing from a melt consisting of the semiconductor as major ingredient and two significant impurity solutes as minor ingredients, the solutes being either of opposite conductivity imparting types and having values of 1-k (k being the distribution coefficient) of the same sign, or of the same conductivity imparting type but having values of 1-k of opposite signs. The ratio of the concentration in atoms/c.c. of one solute to that of the other is between 0.8 and 1.2 times the absolute value of the ratio of the growth rate coefficient of the distribution coefficient of the other solute to that of said one solute for a desired growth rate. Typical systems of the first type mentioned above are germanium containing gallium and antimony, indium and arsenic, or indium and antimony, and silicon containing gallium and antimony, arsenic and boron, or phosphorus and boron. Two typical systems of the second type are germanium containing gallium and boron, and indium antimonide containing zinc and cadmium. It is demonstrated mathematically in the Specification that the uncompensated activator concentration in the crystallizing material and hence the resistivity is far less sensitive to changes in growth conditions with time and variations in such conditions over the cross-section of the freezing interface than that of material of the same resistivity crystallized from a melt containing only a single significant impurity solute, particularly when the ratio of concentrations is equal to the aforesaid ratio. Additional significant impurity solutes or impurities for controlling the carrier lifetime of the material may also be incorporated in the melt. The crystallizing process may be a normal freezing operation such as crystal pulling, or a zone melting process. Compensation for changing concentration in the melt may be effected by gradually changing the growth rate as the process proceeds. Specifications 727,678 and 769,673 are referred to.
GB20207/58A 1957-06-25 1958-06-24 Improvements in or relating to processes for the production of semiconductive bodies Expired GB871839A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US667956A US2861905A (en) 1957-06-25 1957-06-25 Process for controlling excess carrier concentration in a semiconductor

Publications (1)

Publication Number Publication Date
GB871839A true GB871839A (en) 1961-07-05

Family

ID=24680369

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20207/58A Expired GB871839A (en) 1957-06-25 1958-06-24 Improvements in or relating to processes for the production of semiconductive bodies

Country Status (7)

Country Link
US (1) US2861905A (en)
BE (1) BE567569A (en)
CH (1) CH402425A (en)
DE (1) DE1215658B (en)
FR (1) FR1208294A (en)
GB (1) GB871839A (en)
NL (2) NL112556C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106222742A (en) * 2016-09-12 2016-12-14 江西赛维Ldk太阳能高科技有限公司 A kind of crystalline silicon and preparation method thereof

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
FR1228285A (en) * 1959-03-11 1960-08-29 Semiconductor structures for parametric microwave amplifier
NL109018C (en) * 1960-01-28
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
BE632279A (en) * 1962-05-14
DE3049376A1 (en) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen METHOD FOR PRODUCING VERTICAL PN TRANSITIONS WHEN DRAWING SILICO DISC FROM A SILICONE MELT
JPS5914440B2 (en) * 1981-09-18 1984-04-04 住友電気工業株式会社 Method for doping boron into CaAs single crystal
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107897C (en) * 1953-05-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106222742A (en) * 2016-09-12 2016-12-14 江西赛维Ldk太阳能高科技有限公司 A kind of crystalline silicon and preparation method thereof
CN106222742B (en) * 2016-09-12 2019-01-29 江西赛维Ldk太阳能高科技有限公司 A kind of crystalline silicon and preparation method thereof

Also Published As

Publication number Publication date
NL229017A (en) 1900-01-01
CH402425A (en) 1965-11-15
DE1215658B (en) 1966-05-05
FR1208294A (en) 1960-02-23
US2861905A (en) 1958-11-25
NL112556C (en) 1900-01-01
BE567569A (en) 1900-01-01

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