GB846720A - Transistor crystals - Google Patents
Transistor crystalsInfo
- Publication number
- GB846720A GB846720A GB3975/57A GB397557A GB846720A GB 846720 A GB846720 A GB 846720A GB 3975/57 A GB3975/57 A GB 3975/57A GB 397557 A GB397557 A GB 397557A GB 846720 A GB846720 A GB 846720A
- Authority
- GB
- United Kingdom
- Prior art keywords
- melt
- alloy
- germanium
- crystal
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 239000000155 melt Substances 0.000 abstract 8
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910000807 Ga alloy Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- LDMJFDJYOVHUMJ-UHFFFAOYSA-N stibanylidynesilicon Chemical compound [Sb]#[Si] LDMJFDJYOVHUMJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
A method of growing a PNP germanium or NPN silicon body for transistors (see Group XXXVI) comprises the steps of preparing a melt of the semiconductor containing an excess of donor (or acceptor) impurity, growing part of the melt on to a seed crystal by the pulling technique, adding donor and acceptor impurities simultaneously to the remaining melt, and continuing growth on to the seed. The relative amounts, segregation coefficients, and diffusion constants of the added impurities are so chosen that the material crystallized from the melt is of the same conductivity type throughout but so that during the second stage of growth the acceptor (donor) impurity diffuses into the material grown in the first stage to produce a region of opposite conductivity type at the interface. In one example a seed crystal is drawn at 940 DEG C. from a melt of germanium doped with gallium. When half the melt has grown into a P type crystal withdrawal is stopped and a germanium-arsenic-gallium alloy added to the melt. The temperature is raised to 980 DEG C. for 10 seconds to dissolve the alloy, and the crystal allowed to melt back partially to remove material into which uncontrolled diffusion may have taken place. The remainder of the melt is then pulled at 940 DEG C. In another example a seed is drawn at 1420 DEG C. from antimony doped silicon. When half the melt has been pulled arsenicaluminium alloy is added and after a period in which the temperature is raised to 1440 DEG C. to dissolve the alloy and partially melt back the crystal, pulling is resumed at 1390 DEG C. Reference has been directed by the Comptroller to Specification 779,660.ALSO:An alloy used in the preparation of junction transistors (see Group XXXVI) is made by fusing together 50 grams of germanium, 400 milligrams of arsenic and 600 milligrams of gallium, pulverizing the resulting product and then re-fusing it to form a pellet. A silicon-antimony alloy containing 2% by weight of antimony is also used. Reference has been directed by the Comptroller to Specification 779,660.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US358866XA | 1956-03-02 | 1956-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB846720A true GB846720A (en) | 1960-08-31 |
Family
ID=21885372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3975/57A Expired GB846720A (en) | 1956-03-02 | 1957-02-05 | Transistor crystals |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE555459A (en) |
| CH (1) | CH358866A (en) |
| FR (1) | FR1172813A (en) |
| GB (1) | GB846720A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| US3533862A (en) * | 1967-08-21 | 1970-10-13 | Texas Instruments Inc | Method of forming semiconductor regions in an epitaxial layer |
| EP1063706A2 (en) * | 1999-06-24 | 2000-12-27 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multicrystalline silicon, Ga-doped multicrystalline silicon wafer and method for producing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
| US3181097A (en) * | 1960-09-19 | 1965-04-27 | Sprague Electric Co | Single crystal semiconductor resistors |
| US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
-
0
- BE BE555459D patent/BE555459A/xx unknown
-
1957
- 1957-02-05 GB GB3975/57A patent/GB846720A/en not_active Expired
- 1957-03-02 FR FR1172813D patent/FR1172813A/en not_active Expired
- 1957-03-02 CH CH358866D patent/CH358866A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| US3533862A (en) * | 1967-08-21 | 1970-10-13 | Texas Instruments Inc | Method of forming semiconductor regions in an epitaxial layer |
| EP1063706A2 (en) * | 1999-06-24 | 2000-12-27 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multicrystalline silicon, Ga-doped multicrystalline silicon wafer and method for producing the same |
| EP1063706A3 (en) * | 1999-06-24 | 2005-07-13 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multicrystalline silicon, Ga-doped multicrystalline silicon wafer and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1172813A (en) | 1959-02-16 |
| BE555459A (en) | |
| CH358866A (en) | 1961-12-15 |
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