GB944153A - A process for the production of semi-conductor bodies with npn or pnp junctions - Google Patents

A process for the production of semi-conductor bodies with npn or pnp junctions

Info

Publication number
GB944153A
GB944153A GB51960A GB51960A GB944153A GB 944153 A GB944153 A GB 944153A GB 51960 A GB51960 A GB 51960A GB 51960 A GB51960 A GB 51960A GB 944153 A GB944153 A GB 944153A
Authority
GB
United Kingdom
Prior art keywords
crystal
melt
type
conductivity type
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51960A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB944153A publication Critical patent/GB944153A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

944,153. Semi-conductor devices. KABUSHIKI KAISHA HITACHI SEISAKUSHO. Jan. 6, 1960 [Jan. 22, 1959; May 20, 1959], No. 519/60. Heading H1K. A PNP or NPN semiconductor body is produced by contacting a crystal of one conductivity type with a semiconductor melt containing both types of impurity, slowly melting back a portion of the crystal and then maintaining zero growth condition so that diffusion occurs to convert a thin layer to the opposite conductivity type and then rapidly growing and withdrawing the crystal to provide a further portion of the first conductivity type. Fig. 2 shows said crystal 1 with a P-type collector portion 3 pulled from a melt of germanium and indium. Gallium and antimony are then added to the melt and the crystal lowered into the melt so that a portion of it is melted. The temperature is then maintained at zero growth condition so that the antimony diffuses to convert a thin layer to N- type. The melt is then cooled and the crystal withdrawn rapidly so that it is of P-type conductivity due to the high segregation coefficient of the gallium. Phosphorus, arsenic, boron and aluminium may also be used as impurities and silicon may be used in place of germanium. Heat treatment subsequent to the formation of the single crystal may be applied to increase the thickness of the intermediate zone by effecting further diffusion.
GB51960A 1959-01-22 1960-01-06 A process for the production of semi-conductor bodies with npn or pnp junctions Expired GB944153A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP152259 1959-01-22
JP1579659 1959-05-20

Publications (1)

Publication Number Publication Date
GB944153A true GB944153A (en) 1963-12-11

Family

ID=26334745

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51960A Expired GB944153A (en) 1959-01-22 1960-01-06 A process for the production of semi-conductor bodies with npn or pnp junctions

Country Status (3)

Country Link
DE (1) DE1261119B (en)
GB (1) GB944153A (en)
NL (1) NL247569A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19936651A1 (en) * 1999-08-04 2001-02-15 Forsch Mineralische Und Metall Process and production of a segmented crystal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2851341A (en) * 1953-07-08 1958-09-09 Shirley I Weiss Method and equipment for growing crystals
NL105554C (en) * 1955-01-13

Also Published As

Publication number Publication date
NL247569A (en)
DE1261119B (en) 1968-02-15

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