CH347579A - A method for the manufacture of semiconductor crystals having zones of different doping - Google Patents

A method for the manufacture of semiconductor crystals having zones of different doping

Info

Publication number
CH347579A
CH347579A CH347579DA CH347579A CH 347579 A CH347579 A CH 347579A CH 347579D A CH347579D A CH 347579DA CH 347579 A CH347579 A CH 347579A
Authority
CH
Switzerland
Prior art keywords
zones
manufacture
different doping
semiconductor crystals
crystals
Prior art date
Application number
Other languages
German (de)
Inventor
Heinz Dr Dorendorf
Heinz Dr Henker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE347579X priority Critical
Priority to DES42354A priority patent/DE1105621B/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH347579A publication Critical patent/CH347579A/en

Links

Classifications

    • GPHYSICS
    • G04HOROLOGY
    • G04CELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C11/00Synchronisation of independently-driven clocks
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/18Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
CH347579D 1955-01-13 1956-01-12 A method for the manufacture of semiconductor crystals having zones of different doping CH347579A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE347579X 1955-01-13
DES42354A DE1105621B (en) 1955-01-13 1955-01-13 Method for influencing the crystallization from a melt of semiconductor base material after the stage drawing process using the Peltier effect

Publications (1)

Publication Number Publication Date
CH347579A true CH347579A (en) 1960-07-15

Family

ID=39187020

Family Applications (1)

Application Number Title Priority Date Filing Date
CH347579D CH347579A (en) 1955-01-13 1956-01-12 A method for the manufacture of semiconductor crystals having zones of different doping

Country Status (4)

Country Link
CH (1) CH347579A (en)
DE (2) DE1105621B (en)
GB (1) GB813841A (en)
NL (1) NL105554C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
NL247569A (en) * 1959-01-22
NL301226A (en) * 1962-12-03
DE1262978B (en) * 1965-01-05 1968-03-14 Siemens Ag A method for manufacturing a semiconductor single crystal
DE1297584B (en) * 1965-02-02 1969-06-19 Akademie D Wissenschaften Berl A method of floating zone-melting a semiconductor rod
DE1282612B (en) * 1965-08-26 1968-11-14 Halbleiterwerk Frankfurt Oder A process for the homogenization of the dopants in semiconductor single crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514119A (en) * 1951-09-13

Also Published As

Publication number Publication date
GB813841A (en) 1959-05-27
DE1105621B (en) 1961-04-27
DE964708C (en) 1957-05-29
NL105554C (en)

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