CH347579A - Process for the production of semiconductor crystals with zones of different doping - Google Patents

Process for the production of semiconductor crystals with zones of different doping

Info

Publication number
CH347579A
CH347579A CH347579DA CH347579A CH 347579 A CH347579 A CH 347579A CH 347579D A CH347579D A CH 347579DA CH 347579 A CH347579 A CH 347579A
Authority
CH
Switzerland
Prior art keywords
zones
production
different doping
semiconductor crystals
crystals
Prior art date
Application number
Other languages
German (de)
Inventor
Heinz Dr Dorendorf
Heinz Dr Henker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH347579A publication Critical patent/CH347579A/en

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C11/00—Synchronisation of independently-driven clocks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH347579D 1955-01-13 1956-01-12 Process for the production of semiconductor crystals with zones of different doping CH347579A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES42354A DE1105621B (en) 1955-01-13 1955-01-13 Process for influencing the crystallization from a melt of semiconductor base material according to the step drawing process using the Peltier effect
DE347579X 1955-01-13

Publications (1)

Publication Number Publication Date
CH347579A true CH347579A (en) 1960-07-15

Family

ID=39187020

Family Applications (1)

Application Number Title Priority Date Filing Date
CH347579D CH347579A (en) 1955-01-13 1956-01-12 Process for the production of semiconductor crystals with zones of different doping

Country Status (4)

Country Link
CH (1) CH347579A (en)
DE (2) DE1105621B (en)
GB (1) GB813841A (en)
NL (1) NL105554C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
NL247569A (en) * 1959-01-22
NL301226A (en) * 1962-12-03
DE1262978B (en) * 1965-01-05 1968-03-14 Siemens Ag Method for producing a semiconductor single crystal
DE1297584B (en) * 1965-02-02 1969-06-19 Akademie D Wissenschaften Berl Method for crucible-free zone melting of a semiconductor rod
DE1282612B (en) * 1965-08-26 1968-11-14 Halbleiterwerk Frankfurt Oder Process for the homogenization of dopants in semiconductor single crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514119A (en) * 1951-09-13

Also Published As

Publication number Publication date
DE964708C (en) 1957-05-29
NL105554C (en)
GB813841A (en) 1959-05-27
DE1105621B (en) 1961-04-27

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