CH433191A - Process for the production of single crystal semiconductor material - Google Patents
Process for the production of single crystal semiconductor materialInfo
- Publication number
- CH433191A CH433191A CH424565A CH424565A CH433191A CH 433191 A CH433191 A CH 433191A CH 424565 A CH424565 A CH 424565A CH 424565 A CH424565 A CH 424565A CH 433191 A CH433191 A CH 433191A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- single crystal
- semiconductor material
- crystal semiconductor
- semiconductor
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES90831A DE1218412B (en) | 1964-04-29 | 1964-04-29 | Process for the production of single crystal semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH433191A true CH433191A (en) | 1967-04-15 |
Family
ID=7516104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH424565A CH433191A (en) | 1964-04-29 | 1965-03-26 | Process for the production of single crystal semiconductor material |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3360405A (en) |
| BE (1) | BE663077A (en) |
| CH (1) | CH433191A (en) |
| DE (1) | DE1218412B (en) |
| GB (1) | GB1031560A (en) |
| NL (1) | NL6502375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032390A (en) * | 1974-02-25 | 1977-06-28 | Corning Glass Works | Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1619996A1 (en) * | 1967-03-18 | 1971-07-08 | Siemens Ag | Method for producing a single-crystal rod, in particular from semiconductor material |
| US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
| US4784715A (en) * | 1975-07-09 | 1988-11-15 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
| US4133969A (en) * | 1978-01-03 | 1979-01-09 | Zumbrunnen Allen D | High frequency resistance melting furnace |
| US4324610A (en) * | 1978-03-20 | 1982-04-13 | Motorola, Inc. | Method for the controlled melting of semiconductor bodies |
| US5958133A (en) * | 1996-01-29 | 1999-09-28 | General Signal Corporation | Material handling system for growing high-purity crystals |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
| BE542056A (en) * | 1954-10-15 | |||
| US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
| US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
| US3044967A (en) * | 1958-01-06 | 1962-07-17 | Int Standard Electric Corp | Production of pure semi-conductor material |
| US3228753A (en) * | 1962-07-27 | 1966-01-11 | Texas Instruments Inc | Orbital-spin crystal pulling |
| US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
-
1964
- 1964-04-29 DE DES90831A patent/DE1218412B/en active Pending
-
1965
- 1965-02-25 NL NL6502375A patent/NL6502375A/xx unknown
- 1965-03-26 CH CH424565A patent/CH433191A/en unknown
- 1965-04-27 BE BE663077D patent/BE663077A/xx unknown
- 1965-04-28 GB GB17966/65A patent/GB1031560A/en not_active Expired
- 1965-04-29 US US451893A patent/US3360405A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032390A (en) * | 1974-02-25 | 1977-06-28 | Corning Glass Works | Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1218412B (en) | 1966-06-08 |
| US3360405A (en) | 1967-12-26 |
| GB1031560A (en) | 1966-06-02 |
| BE663077A (en) | 1965-10-27 |
| NL6502375A (en) | 1965-11-01 |
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