DE1282612B - A process for the homogenization of the dopants in semiconductor single crystals - Google Patents

A process for the homogenization of the dopants in semiconductor single crystals

Info

Publication number
DE1282612B
DE1282612B DE1965V0029191 DEV0029191A DE1282612B DE 1282612 B DE1282612 B DE 1282612B DE 1965V0029191 DE1965V0029191 DE 1965V0029191 DE V0029191 A DEV0029191 A DE V0029191A DE 1282612 B DE1282612 B DE 1282612B
Authority
DE
Germany
Prior art keywords
dopants
homogenization
crystals
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1965V0029191
Other languages
German (de)
Inventor
Dipl-Phys Horst Falk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HALBLEITERWERK FRANKFURT ODER
Original Assignee
HALBLEITERWERK FRANKFURT ODER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HALBLEITERWERK FRANKFURT ODER filed Critical HALBLEITERWERK FRANKFURT ODER
Priority to DE1965V0029191 priority Critical patent/DE1282612B/en
Publication of DE1282612B publication Critical patent/DE1282612B/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/18Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
DE1965V0029191 1965-08-26 1965-08-26 A process for the homogenization of the dopants in semiconductor single crystals Pending DE1282612B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1965V0029191 DE1282612B (en) 1965-08-26 1965-08-26 A process for the homogenization of the dopants in semiconductor single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965V0029191 DE1282612B (en) 1965-08-26 1965-08-26 A process for the homogenization of the dopants in semiconductor single crystals

Publications (1)

Publication Number Publication Date
DE1282612B true DE1282612B (en) 1968-11-14

Family

ID=7584698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1965V0029191 Pending DE1282612B (en) 1965-08-26 1965-08-26 A process for the homogenization of the dopants in semiconductor single crystals

Country Status (1)

Country Link
DE (1) DE1282612B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105621B (en) * 1955-01-13 1961-04-27 Siemens Ag Method for influencing the crystallization from a melt of semiconductor base material after the stage drawing process using the Peltier effect
DE1106732B (en) * 1957-05-01 1961-05-18 Sylvania Electric Prod A process for the zone refining of the polycrystalline semiconductors meltable

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105621B (en) * 1955-01-13 1961-04-27 Siemens Ag Method for influencing the crystallization from a melt of semiconductor base material after the stage drawing process using the Peltier effect
DE1106732B (en) * 1957-05-01 1961-05-18 Sylvania Electric Prod A process for the zone refining of the polycrystalline semiconductors meltable

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