FR1180064A - Semiconductor crystal manufacturing - Google Patents

Semiconductor crystal manufacturing

Info

Publication number
FR1180064A
FR1180064A FR1180064DA FR1180064A FR 1180064 A FR1180064 A FR 1180064A FR 1180064D A FR1180064D A FR 1180064DA FR 1180064 A FR1180064 A FR 1180064A
Authority
FR
France
Prior art keywords
semiconductor crystal
crystal manufacturing
manufacturing
semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1180064A publication Critical patent/FR1180064A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR1180064D 1956-07-02 1957-07-02 Semiconductor crystal manufacturing Expired FR1180064A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US595503A US2904512A (en) 1956-07-02 1956-07-02 Growth of uniform composition semiconductor crystals

Publications (1)

Publication Number Publication Date
FR1180064A true FR1180064A (en) 1959-06-01

Family

ID=24383491

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1180064D Expired FR1180064A (en) 1956-07-02 1957-07-02 Semiconductor crystal manufacturing

Country Status (5)

Country Link
US (1) US2904512A (en)
DE (1) DE1034772B (en)
FR (1) FR1180064A (en)
GB (1) GB839783A (en)
NL (2) NL218610A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1194158B (en) * 1958-10-04 1965-06-03 Telefunken Patent Method and device for producing a semiconductor crystal, in particular from germanium, with a high dislocation density
NL246541A (en) * 1959-01-20
GB898872A (en) * 1959-08-14 1962-06-14 Ici Ltd Improvements in the manufacture of crystalline silicon
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
NL258297A (en) * 1959-12-03
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
US3404966A (en) * 1964-09-04 1968-10-08 Northeru Electric Company Ltd Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
DE1519867A1 (en) * 1965-02-27 1970-02-26 Siemens Ag Device for zone melting in a vacuum
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
US3452549A (en) * 1966-03-28 1969-07-01 Us Army Method for producing predetermined crystal structures
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
DE2338338C3 (en) * 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for doping during crucible-free zone melting of a semiconductor crystal rod
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution
DE3437524A1 (en) * 1984-10-12 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Process for producing a silicon semiconductor bar doped with indium or bismuth
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
JPH0680495A (en) * 1992-06-16 1994-03-22 Sumitomo Metal Ind Ltd Method for crystal growth
JPH06279170A (en) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp Production of single crystal and its device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
NL88324C (en) * 1950-06-15
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon

Also Published As

Publication number Publication date
NL218610A (en)
GB839783A (en) 1960-06-29
NL98843C (en)
DE1034772B (en) 1958-07-24
US2904512A (en) 1959-09-15

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