GB889058A - Improvements in or relating to the production of crystals - Google Patents

Improvements in or relating to the production of crystals

Info

Publication number
GB889058A
GB889058A GB27537/59A GB2753759A GB889058A GB 889058 A GB889058 A GB 889058A GB 27537/59 A GB27537/59 A GB 27537/59A GB 2753759 A GB2753759 A GB 2753759A GB 889058 A GB889058 A GB 889058A
Authority
GB
United Kingdom
Prior art keywords
crystal
pulled
pulling
iii
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27537/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB889058A publication Critical patent/GB889058A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Abstract

A flat elongated "dendritic" crystal, having for example a width of 0,5-5,0 mm. and a thickness of 0,025-0,63 mm., is pulled from a supercooled melt of a substance crystallizing in a cubic lattice structure using a seed crystal having at least one interior twin [III] plane orientated such that the crystal if etched would exhibit triangular etch pits with apices uppermost on one or both <PICT:0889058/III/1> <PICT:0889058/III/2> [111] face (Fig. 2). A pair of crystals may be pulled simultaneously using a single seed crystal. Supercooling may be 1 DEG -40 DEG C. The rate of pulling may be 0,2-25 inches/min. Substances which may be pulled are silicon, germanium, zinc sulphide and selenide, and a compound of aluminium, gallium, or indium and phosphorus, arsenic, or antimony. In the case of gallium arsenide pulling may be effected in an atmosphere of arsenic. Doping agents specified are antimony, phosphorus, indium, gallium, aluminium, and gold. Pulling may be effected in a vacuum or an atmosphere of helium, argon, hydrogen, nitrogen, or a mixture of hydrogen and nitrogen. As shown in Fig. 1, a crystal 26 is withdrawn from a melt in a graphite crucible surrounded by an induction heating coil 20 and surmounted by an apertured lid 22. The pulling apparatus is enclosed in a glass vessel 32. The lid may be of thermally insulating ceramic material to conserve heat. Alternatively heat may be applied by means of an electrically heated coil or sleeve surrounding the lower part of the pulled crystal and an electrically heated graphite lid.
GB27537/59A 1958-08-28 1959-08-12 Improvements in or relating to the production of crystals Expired GB889058A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75783258A 1958-08-28 1958-08-28
US844288A US3031403A (en) 1958-08-28 1959-10-05 Process for producing crystals and the products thereof

Publications (1)

Publication Number Publication Date
GB889058A true GB889058A (en) 1962-02-07

Family

ID=27116458

Family Applications (2)

Application Number Title Priority Date Filing Date
GB27537/59A Expired GB889058A (en) 1958-08-28 1959-08-12 Improvements in or relating to the production of crystals
GB13783/60A Expired GB913674A (en) 1958-08-28 1960-04-20 Improvements in or relating to the production of crystals

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB13783/60A Expired GB913674A (en) 1958-08-28 1960-04-20 Improvements in or relating to the production of crystals

Country Status (6)

Country Link
US (1) US3031403A (en)
CH (2) CH440226A (en)
DE (2) DE1291320B (en)
FR (1) FR1244924A (en)
GB (2) GB889058A (en)
NL (2) NL241834A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257754B (en) * 1963-01-29 1968-01-04 Fuji Tsushinki Seizo Kabushiki Method and device for producing dendrites from semiconductor material

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124452A (en) * 1964-03-10 figure
GB948002A (en) * 1959-07-23 1964-01-29 Nat Res Dev Improvements in or relating to the preparation of semiconductor materials
US3130040A (en) * 1960-03-21 1964-04-21 Westinghouse Electric Corp Dendritic seed crystals having a critical spacing between three interior twin planes
NL262949A (en) * 1960-04-02 1900-01-01
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
DE1254607B (en) * 1960-12-08 1967-11-23 Siemens Ag Process for the production of monocrystalline semiconductor bodies from the gas phase
BE631688A (en) * 1961-03-27 1900-01-01
BE624959A (en) * 1961-11-20
NL285435A (en) * 1961-11-24 1900-01-01
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite
DE1193475B (en) * 1962-08-23 1965-05-26 Westinghouse Electric Corp Device for rotating, lifting and lowering the crucible when pulling dendritic single crystals
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
GB1015541A (en) * 1963-03-18 1966-01-05 Fujitsu Ltd Improvements in or relating to methods of producing a semi-conductor dendrite
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3933981A (en) * 1973-11-30 1976-01-20 Texas Instruments Incorporated Tin-lead purification of silicon
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
US6217286B1 (en) * 1998-06-26 2001-04-17 General Electric Company Unidirectionally solidified cast article and method of making
EP1556529B1 (en) * 2002-10-18 2007-09-12 Evergreen Solar Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US11088189B2 (en) 2017-11-14 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. High light absorption structure for semiconductor image sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769426A (en) * 1953-08-05 1957-03-06 Ass Elect Ind Improvements relating to the manufacture of crystalline material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257754B (en) * 1963-01-29 1968-01-04 Fuji Tsushinki Seizo Kabushiki Method and device for producing dendrites from semiconductor material

Also Published As

Publication number Publication date
US3031403A (en) 1962-04-24
DE1291320B (en) 1969-03-27
CH440226A (en) 1967-07-31
GB913674A (en) 1962-12-28
FR1244924A (en) 1960-11-04
CH475014A (en) 1969-07-15
NL241834A (en) 1900-01-01
DE1302031B (en) 1969-10-16
NL113205C (en) 1900-01-01

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