JPS5165085A - - Google Patents

Info

Publication number
JPS5165085A
JPS5165085A JP50123339A JP12333975A JPS5165085A JP S5165085 A JPS5165085 A JP S5165085A JP 50123339 A JP50123339 A JP 50123339A JP 12333975 A JP12333975 A JP 12333975A JP S5165085 A JPS5165085 A JP S5165085A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50123339A
Other languages
Japanese (ja)
Other versions
JPS546033B2 (en
Inventor
Ei Getsu Richaado
Ei Giisu Edowaado
Esu Purasuketsuto Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5165085A publication Critical patent/JPS5165085A/ja
Publication of JPS546033B2 publication Critical patent/JPS546033B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP12333975A 1974-10-29 1975-10-15 Expired JPS546033B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51883174A 1974-10-29 1974-10-29

Publications (2)

Publication Number Publication Date
JPS5165085A true JPS5165085A (en) 1976-06-05
JPS546033B2 JPS546033B2 (en) 1979-03-23

Family

ID=24065695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12333975A Expired JPS546033B2 (en) 1974-10-29 1975-10-15

Country Status (6)

Country Link
JP (1) JPS546033B2 (en)
CA (1) CA1055818A (en)
DE (1) DE2541140A1 (en)
FR (1) FR2289235A1 (en)
GB (1) GB1463648A (en)
IT (1) IT1042727B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154262U (en) * 1982-04-12 1983-10-15 株式会社日立製作所 elevator control panel
JPS60124724A (en) * 1983-12-12 1985-07-03 Hitachi Ltd Touch panel input device
JPS60167024A (en) * 1984-02-08 1985-08-30 Omron Tateisi Electronics Co Key input device equipped with touch panel
DE3731010A1 (en) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Process for liquid-phase epitaxy
JPH01320520A (en) * 1988-06-23 1989-12-26 Toshiba Corp Method for controlling input of touch screen device
JPH07168669A (en) * 1994-12-02 1995-07-04 Hitachi Ltd Touch panel input device
DE10241703A1 (en) * 2002-09-09 2004-03-18 Vishay Semiconductor Gmbh Reactor for carrying liquid phase epitaxial growth on semiconductor substrates comprises a growing chamber having an intermediate storage region for temporarily storing melts and a growing region for holding a substrate

Also Published As

Publication number Publication date
JPS546033B2 (en) 1979-03-23
FR2289235B1 (en) 1977-07-22
DE2541140A1 (en) 1976-05-13
GB1463648A (en) 1977-02-02
IT1042727B (en) 1980-01-30
FR2289235A1 (en) 1976-05-28
CA1055818A (en) 1979-06-05

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