JPS57153487A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS57153487A
JPS57153487A JP3851181A JP3851181A JPS57153487A JP S57153487 A JPS57153487 A JP S57153487A JP 3851181 A JP3851181 A JP 3851181A JP 3851181 A JP3851181 A JP 3851181A JP S57153487 A JPS57153487 A JP S57153487A
Authority
JP
Japan
Prior art keywords
type
substrate
layer
inp
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3851181A
Other languages
Japanese (ja)
Inventor
Toshiyuki Tanahashi
Ichiro Ushijima
Takeshi KOMIYAMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3851181A priority Critical patent/JPS57153487A/en
Publication of JPS57153487A publication Critical patent/JPS57153487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To grow a required epitaxial layer in a V shaped groove with fine reproductivity by slowing down super cooling speed and cooling speed of material melting liquid. CONSTITUTION:A V shaped groove 4 is formed with it tip reaching an n type InP substrate 1 penetrating a p type InP layer 2 by treating an InP substrate 3 of 100 face azimuth with different azimuth etching liquid. The direction in which the groove 4 is formed is either azimuth 00 or 011 according to etching liquid. Then an n type InP layers 5, 5' are grown respectively in the groove 4 and on the surface of the substrate 3 by bringing these in contact with InP melting liquid with its saturation temperature less than 10 deg.C at the speed less than 0.2 deg.C/min. to perform liquid phase epitaxial growth. Then n type Ga As P layers 6, 6', a p type InP layer 7, and a p type In Ga As P layer 8 are grown on the surface of the substrate 3. A required epitaxial layer is thus formed with fine reproductivity.
JP3851181A 1981-03-17 1981-03-17 Manufacture of semiconductor light emitting device Pending JPS57153487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3851181A JPS57153487A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3851181A JPS57153487A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57153487A true JPS57153487A (en) 1982-09-22

Family

ID=12527287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3851181A Pending JPS57153487A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57153487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631802A (en) * 1980-06-24 1986-12-30 Sumitomo Electric Industries, Ltd. Process for the production of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631802A (en) * 1980-06-24 1986-12-30 Sumitomo Electric Industries, Ltd. Process for the production of a semiconductor device

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