JPS57198686A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS57198686A
JPS57198686A JP8401781A JP8401781A JPS57198686A JP S57198686 A JPS57198686 A JP S57198686A JP 8401781 A JP8401781 A JP 8401781A JP 8401781 A JP8401781 A JP 8401781A JP S57198686 A JPS57198686 A JP S57198686A
Authority
JP
Japan
Prior art keywords
groove
inp
melted
liquid
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8401781A
Other languages
Japanese (ja)
Inventor
Toshiyuki Tanahashi
Ichiro Ushijima
Takeshi KOMIYAMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401781A priority Critical patent/JPS57198686A/en
Publication of JPS57198686A publication Critical patent/JPS57198686A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To simplify the processes by providing a V shpae groove of <0.1 anti 1> in an InP substrate having a surface azimuth of (100), using InP series solutions wherein supercooling degrees are specified, respectively, forming an epitaxial layer in the groove and on the surface of the part other than the groove, and performing the epitaxial growth by one same process. CONSTITUTION:Anisotropic etching is performed on the surface of the N type InP substrate 10 having the surface azimuth of (100) by using Br methanol, and the V shaped groove 4 having the direction of <0.1 anti 1> is formed. Then said substrate 10 is mounted on a liquid phase epitaxial growing boat 11. Melted raw metal material liquid is placed in raw material wells 13 provided in a slider 12 and heated in an H2 atmosphere. Then the melted liquids 14-18 are formed. In this constitution, the InP series solution whose supercooling degree is larger than 10 deg.C is used as the melted liquid 14 and cooled at a rate of 0.2 deg.C/ min or more. At first, a P type InP layer 2 is grown on the substurate 10 except the groove 4. The InP series solution whose supercooling degree is 10 deg.C or less is used as the melted liquid 15 and cooled at the rate of 0.2 deg.C/min or less. Then, N type In layers 5 and 5' are grown in the groove 4 and on the layer 2. The procedure is repeated as required.
JP8401781A 1981-06-01 1981-06-01 Manufacture of semiconductor light emitting device Pending JPS57198686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401781A JPS57198686A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401781A JPS57198686A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57198686A true JPS57198686A (en) 1982-12-06

Family

ID=13818794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401781A Pending JPS57198686A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57198686A (en)

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