JPS571223A - Monolithic composite semiconductor device and manufacture thereof - Google Patents

Monolithic composite semiconductor device and manufacture thereof

Info

Publication number
JPS571223A
JPS571223A JP7467180A JP7467180A JPS571223A JP S571223 A JPS571223 A JP S571223A JP 7467180 A JP7467180 A JP 7467180A JP 7467180 A JP7467180 A JP 7467180A JP S571223 A JPS571223 A JP S571223A
Authority
JP
Japan
Prior art keywords
face
faces
phase
light
monolithic composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7467180A
Other languages
Japanese (ja)
Inventor
Kenzo Akita
Itsuo Umeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7467180A priority Critical patent/JPS571223A/en
Publication of JPS571223A publication Critical patent/JPS571223A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition

Abstract

PURPOSE:To obtain the monolithic composite element having excellent characteristics for the subject device by a method wherein a light-emitting or light-receiving element is grown in liquid-phase on the low exponential face of a single substrate, whereon a face-direction-specified low exponential face and an off-angle face are combinedly formed, and an FET containing a high ratio resistance layer is grown in vapor-phase on an off-angle surface. CONSTITUTION:On the surface of the substrate 1 such as a GaAs and the like having the desired density by doping an Si, two pieces of low exponential faces 2 and 4 having a face-direction of (100)+ or -0.5 deg. or (111)+ or -0.5 deg. are formed. At this time, in between faces 2 and 4, off-angle faces 3 and 5 having the face-direction deviated at 3-7 deg. against the face of the faces 2 and 4 are provided, and the face 4 alone is located at a point below the face 2. Thus, the substrate 1 is constituted, and the light-emitting diode and the like, which is suitable for liquid-phase epitaxial growth, is formed on the low exponential faces 2 and 4, and the FET containing semi-insulating GaAs suitable for vapor-phase growing is formed on the faces 3 and 5. Through these procedures, the monolithic composite semiconductor device having excellent characteristics can be obtained.
JP7467180A 1980-06-03 1980-06-03 Monolithic composite semiconductor device and manufacture thereof Pending JPS571223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7467180A JPS571223A (en) 1980-06-03 1980-06-03 Monolithic composite semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7467180A JPS571223A (en) 1980-06-03 1980-06-03 Monolithic composite semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS571223A true JPS571223A (en) 1982-01-06

Family

ID=13553920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7467180A Pending JPS571223A (en) 1980-06-03 1980-06-03 Monolithic composite semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS571223A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100831A (en) * 1990-02-16 1992-03-31 Sumitomo Electric Industries, Ltd. Method for fabricating semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100831A (en) * 1990-02-16 1992-03-31 Sumitomo Electric Industries, Ltd. Method for fabricating semiconductor device
US5341007A (en) * 1990-02-16 1994-08-23 Sumitomo Electric Industries, Ltd. Semiconductor device and a method for fabricating the same

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