JPS5728366A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5728366A
JPS5728366A JP10342680A JP10342680A JPS5728366A JP S5728366 A JPS5728366 A JP S5728366A JP 10342680 A JP10342680 A JP 10342680A JP 10342680 A JP10342680 A JP 10342680A JP S5728366 A JPS5728366 A JP S5728366A
Authority
JP
Japan
Prior art keywords
concentration
heterointerface
layer
impurities
monocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10342680A
Other languages
Japanese (ja)
Inventor
Sukehisa Hiyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10342680A priority Critical patent/JPS5728366A/en
Publication of JPS5728366A publication Critical patent/JPS5728366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase working speed by bringing the concentration of an electron group surface stored near an interface within a predetermined range in the device containing the heterointerface consisting of an AlxGa1-xAs monocrystal layer containing N type impurities and a GaAs monocrystal. CONSTITUTION:A GaAs substrate is heated in a MBE device and the impurities of the surface are removed, and the AlxGa1-xAs monocrystal layer, X thereof is within a range of 0.2-0.4 such as 0.3, is shaped by adding the N type impurities such as Si. A two-dimensional electron gas is stored in the GaAs layer in the vicinity of the heterointerface, and the surface concentration is decided according to the kind and concentration of the donar impurities and the shape of a layer supplying the two-dimensionl electron gas and the like, but the range of the surface concentration is brought to 3.5X10<11>-2X10<12>/cm<2> by setting these conditions properly. Accordingly, since electronic mobility can be increased up to 3X10<4>cm<2>/Vsec. or higher at 77 deg.K, an element applying the heterointerface can be accelerated.
JP10342680A 1980-07-28 1980-07-28 Semiconductor device Pending JPS5728366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10342680A JPS5728366A (en) 1980-07-28 1980-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10342680A JPS5728366A (en) 1980-07-28 1980-07-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5728366A true JPS5728366A (en) 1982-02-16

Family

ID=14353703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10342680A Pending JPS5728366A (en) 1980-07-28 1980-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728366A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6121930A (en) * 1984-07-06 1986-01-30 Hitachi Cable Ltd Preparation of parent material for optical fiber
US4908325A (en) * 1985-09-15 1990-03-13 Trw Inc. Method of making heterojunction transistors with wide band-gap stop etch layer
JP2007240386A (en) * 2006-03-09 2007-09-20 Tokyo Electric Power Co Inc:The Nondestructive inspection apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1980 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6121930A (en) * 1984-07-06 1986-01-30 Hitachi Cable Ltd Preparation of parent material for optical fiber
JPH0582333B2 (en) * 1984-07-06 1993-11-18 Hitachi Cable
US4908325A (en) * 1985-09-15 1990-03-13 Trw Inc. Method of making heterojunction transistors with wide band-gap stop etch layer
JP2007240386A (en) * 2006-03-09 2007-09-20 Tokyo Electric Power Co Inc:The Nondestructive inspection apparatus

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