JPS57175796A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS57175796A
JPS57175796A JP5904281A JP5904281A JPS57175796A JP S57175796 A JPS57175796 A JP S57175796A JP 5904281 A JP5904281 A JP 5904281A JP 5904281 A JP5904281 A JP 5904281A JP S57175796 A JPS57175796 A JP S57175796A
Authority
JP
Japan
Prior art keywords
growth
solution
base plate
contact
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5904281A
Other languages
Japanese (ja)
Inventor
Akira Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP5904281A priority Critical patent/JPS57175796A/en
Publication of JPS57175796A publication Critical patent/JPS57175796A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: A solution for growth that is made supersaturated under specific conditions is brought into contact with a base plate and the temperature is kept to effect crystal growth to inhibit melt back and form good growth layers.
CONSTITUTION: When liquid-phase epitaxial growth is effected by bringing the solution for growth into contact with the base plate of DaAs1-YPY(0≤Y<1) to grow AlXAs1-XPZ(0≤X≤1, 0<Z<1), the solution for growth at the saturation temperature is cooled by 4W10°C to form its supersaturated solution. The resultant supersaturated solution is brought into contact with a base plate and the temperature after cooling is kept or it is lowered gradually to grow the crystal.
COPYRIGHT: (C)1982,JPO&Japio
JP5904281A 1981-04-18 1981-04-18 Liquid phase epitaxial growth Pending JPS57175796A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5904281A JPS57175796A (en) 1981-04-18 1981-04-18 Liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5904281A JPS57175796A (en) 1981-04-18 1981-04-18 Liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS57175796A true JPS57175796A (en) 1982-10-28

Family

ID=13101846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5904281A Pending JPS57175796A (en) 1981-04-18 1981-04-18 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS57175796A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134417A (en) * 1983-12-23 1985-07-17 Stanley Electric Co Ltd Liquid phase growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134417A (en) * 1983-12-23 1985-07-17 Stanley Electric Co Ltd Liquid phase growth method
JPH0231492B2 (en) * 1983-12-23 1990-07-13 Stanley Electric Co Ltd

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