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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP8119376ApriorityCriticalpatent/JPS536567A/en
Publication of JPS536567ApublicationCriticalpatent/JPS536567A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To effect liquid-phase epitaxial growth by providing a temperature difference to a molten liquid such that the temperature is lower at an upper portion of the molten liquid.
COPYRIGHT: (C)1978,JPO&Japio
JP8119376A1976-07-071976-07-07Device for effecting liquid-phase epitaxial growth
PendingJPS536567A
(en)