JPS5694678A - Manufacture of lightemitting diode - Google Patents

Manufacture of lightemitting diode

Info

Publication number
JPS5694678A
JPS5694678A JP17230379A JP17230379A JPS5694678A JP S5694678 A JPS5694678 A JP S5694678A JP 17230379 A JP17230379 A JP 17230379A JP 17230379 A JP17230379 A JP 17230379A JP S5694678 A JPS5694678 A JP S5694678A
Authority
JP
Japan
Prior art keywords
temperature
layer
grow
type layer
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17230379A
Other languages
Japanese (ja)
Inventor
Takao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP17230379A priority Critical patent/JPS5694678A/en
Publication of JPS5694678A publication Critical patent/JPS5694678A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To make excellent the crystallization in the 2nd growing layer by making the 1st and 2nd growing layer grow with repeated rise and fall of temperature each time of growing on the occasion wherein the 1st and 2nd N type layer is made to grow epitaxially in liquid phase on a semiconductor substrate and a P type layer is formed thereon to serve as the lightemitting diode. CONSTITUTION:The N type GaP substrate 1 is put in a concavity provided on the surface of a boat 5, and on the boat 5 is provided slidably a slide body 7 having the 1st GaP solution 8 with carrier density set at about 10<17>cm<-3> and the 2nd GaP solution 9 having carrier density set at about 10<16>cm<-3> and containig about 2X 10<18>cm<-3> of N which becomes the center of green luminescence. The entire device is thus heated first up to the temperature Ts, the substrate 1 is made touch the solution 8, then the temperature is lowered down to the temperature Ts' and the 1st N type layer 2 is made to grow on the substrate 1. Then, the temperature is raised yp to TN higher than Ts', the layer is dampened by the solution 9, then the temperature is lowered to TE and the 2nd N type layer 3 is made to grow on the layer 2. After that, a P type layer 4 is formed thereon in the conventional manner.
JP17230379A 1979-12-27 1979-12-27 Manufacture of lightemitting diode Pending JPS5694678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17230379A JPS5694678A (en) 1979-12-27 1979-12-27 Manufacture of lightemitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17230379A JPS5694678A (en) 1979-12-27 1979-12-27 Manufacture of lightemitting diode

Publications (1)

Publication Number Publication Date
JPS5694678A true JPS5694678A (en) 1981-07-31

Family

ID=15939416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17230379A Pending JPS5694678A (en) 1979-12-27 1979-12-27 Manufacture of lightemitting diode

Country Status (1)

Country Link
JP (1) JPS5694678A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980981A (en) * 1982-11-01 1984-05-10 Sanyo Electric Co Ltd Gallium phosphorus green color emitting diode and manufacture thereof
JPS59214277A (en) * 1983-05-20 1984-12-04 Showa Denko Kk Gallium phosphide pure green light-emitting element
JPS59214278A (en) * 1983-05-20 1984-12-04 Showa Denko Kk Gallium phosphide pure green light-emitting element
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process
US5407858A (en) * 1993-04-12 1995-04-18 Shin-Etsu Handotai Co. Ltd. Method of making gap red light emitting element substrate by LPE
US5643827A (en) * 1992-09-30 1997-07-01 Shin-Etsu Handotai Kabushiki Kaisha GaP light emitting substrate and a method of manufacturing it

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980981A (en) * 1982-11-01 1984-05-10 Sanyo Electric Co Ltd Gallium phosphorus green color emitting diode and manufacture thereof
JPH0547996B2 (en) * 1982-11-01 1993-07-20 Sanyo Electric Co
JPS59214277A (en) * 1983-05-20 1984-12-04 Showa Denko Kk Gallium phosphide pure green light-emitting element
JPS59214278A (en) * 1983-05-20 1984-12-04 Showa Denko Kk Gallium phosphide pure green light-emitting element
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process
US5643827A (en) * 1992-09-30 1997-07-01 Shin-Etsu Handotai Kabushiki Kaisha GaP light emitting substrate and a method of manufacturing it
US5407858A (en) * 1993-04-12 1995-04-18 Shin-Etsu Handotai Co. Ltd. Method of making gap red light emitting element substrate by LPE

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