JPS5578550A - Semiconductor and manufacture thereof - Google Patents
Semiconductor and manufacture thereofInfo
- Publication number
- JPS5578550A JPS5578550A JP15166978A JP15166978A JPS5578550A JP S5578550 A JPS5578550 A JP S5578550A JP 15166978 A JP15166978 A JP 15166978A JP 15166978 A JP15166978 A JP 15166978A JP S5578550 A JPS5578550 A JP S5578550A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- temperature
- semiconductor layer
- type semiconductor
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To control the concentration of impurities and lattice defects by melting again the first n-type semiconductor layer which has once grown, raising the temperatures thereof and of growth solution, and simultaneously doping impurities.
CONSTITUTION: An n-type growth solution 4 is made in a growth solution reservoir 5, and the temperature thereof is raised to 1020°C. A boat body 6 is slid until the n-type LEC substrate crystal 1 of GaP and the solution 4 contact with each other. The body 6 is slid further, and the solution 4 with a given thickness is placed on the surface of the crystal 1. The first-type semiconductor layer is let grow on the surface of the crystal 1 by lowering the temperature of the solution 4 to 930W970°C. The impurities and nitrogen which serve as illumination center are doped in the solution 4 through a through hole 7. The temperature of the solution 4 is raised at a rate of 0.2W0.6°C per min. When having reached 950W980°C, the temperature is lowered for forming the second-type semiconductor layer on the surface of the first layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15166978A JPS5578550A (en) | 1978-12-08 | 1978-12-08 | Semiconductor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15166978A JPS5578550A (en) | 1978-12-08 | 1978-12-08 | Semiconductor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5578550A true JPS5578550A (en) | 1980-06-13 |
Family
ID=15523640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15166978A Pending JPS5578550A (en) | 1978-12-08 | 1978-12-08 | Semiconductor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578550A (en) |
-
1978
- 1978-12-08 JP JP15166978A patent/JPS5578550A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2845159C2 (en) | Process for the production of gallium phosphide single crystals | |
| US3703671A (en) | Electroluminescent device | |
| JPS5787119A (en) | Manufacture of semiconductor device | |
| JPS5578550A (en) | Semiconductor and manufacture thereof | |
| JPS53126866A (en) | Production of semiconductor wafers | |
| JPS5694678A (en) | Manufacture of lightemitting diode | |
| JPS59137400A (en) | P type gallium arsenide single crystal with low dislocation density and its manufacture | |
| JPS57128943A (en) | Insulation isolated semiconductor integrated device and manufacture thereof | |
| JPS56109896A (en) | Semiconductor single crystal and its growing method | |
| JPS52120764A (en) | Manufacture of semiconductor device on insulator substrate | |
| JPS5626480A (en) | Semiconductor light emitting device and manufacturing process thereof | |
| JPS57115822A (en) | Manufacture of semiconductor device | |
| JPH10261813A (en) | Substrate for long-wavelength photodetector and epitaxial wafer | |
| JPS56105626A (en) | Compound semiconductor thin film single crystal | |
| JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
| JPS55105389A (en) | Manufacture of light emission diode | |
| JPS5461463A (en) | Vapor phase growth method for semiconductor | |
| JPS5670676A (en) | Luminous diode | |
| JPS6442815A (en) | Compound semiconductor crystal growth method | |
| JPS6452697A (en) | Production of group iii-v compound semiconductor single crystal | |
| JPS5463672A (en) | Vapour-phase growth method for iii-v group compound semi conductor | |
| JPS57175796A (en) | Liquid phase epitaxial growth | |
| JPS6419715A (en) | Growth method for semiconductor thin-film | |
| JPS574115A (en) | Manufacture of junction of semiconductors | |
| JPS5721814A (en) | Manufacture of semiconductor device |