JPS5797665A - Manufacture of npn transistor - Google Patents
Manufacture of npn transistorInfo
- Publication number
- JPS5797665A JPS5797665A JP17310280A JP17310280A JPS5797665A JP S5797665 A JPS5797665 A JP S5797665A JP 17310280 A JP17310280 A JP 17310280A JP 17310280 A JP17310280 A JP 17310280A JP S5797665 A JPS5797665 A JP S5797665A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- temperature
- slowly
- grow
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000010583 slow cooling Methods 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain an NPN transistor with high speed and high pressure resistance by a method wherein a Ga solution containing Si as impurities is used to make a collector layer and a base layer to grow through the liquid phase grow of a slow-cooling system by changing the temperature of the solution. CONSTITUTION:An N type GaAs substrate 1 is set on a substrate holding plate 2 in a furnace to arrange a Ga solution having the GaAs solute and the Si impurities in a solution holder 4 to make the sliders 5 and 6 to travel for making an N type GaAs collector layer and a P type GaAs base layer to grow by slow cooling by turns and continuously. Thereby the Ga solution 3 is made to once go up to the temperature higher than the N-P reverse temperature for slowly cooling after fully solving the solute. Accordingly, when slowly cooling from the temperature higher than the N-P reverse temperature, the N type collector layer grows on the substrate 1, while the carrier density thereof reduces slowly. When dropping under the N-P reverse temperature, the P type base layer grows, while the carrier density thereof increases slowly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17310280A JPS5797665A (en) | 1980-12-10 | 1980-12-10 | Manufacture of npn transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17310280A JPS5797665A (en) | 1980-12-10 | 1980-12-10 | Manufacture of npn transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5797665A true JPS5797665A (en) | 1982-06-17 |
| JPH0142144B2 JPH0142144B2 (en) | 1989-09-11 |
Family
ID=15954208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17310280A Granted JPS5797665A (en) | 1980-12-10 | 1980-12-10 | Manufacture of npn transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797665A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159725A (en) * | 1984-12-29 | 1986-07-19 | Toyota Central Res & Dev Lab Inc | Liquid phase growth method of compound semiconductor |
| JPH01179453A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
| JPH01179452A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
| JPH01179454A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4919787A (en) * | 1972-06-14 | 1974-02-21 |
-
1980
- 1980-12-10 JP JP17310280A patent/JPS5797665A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4919787A (en) * | 1972-06-14 | 1974-02-21 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159725A (en) * | 1984-12-29 | 1986-07-19 | Toyota Central Res & Dev Lab Inc | Liquid phase growth method of compound semiconductor |
| JPH0464456B2 (en) * | 1984-12-29 | 1992-10-15 | Toyoda Chuo Kenkyusho Kk | |
| JPH01179453A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
| JPH01179452A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
| JPH01179454A (en) * | 1988-01-06 | 1989-07-17 | Nec Corp | Heterojunction semiconductor device and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0142144B2 (en) | 1989-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5797665A (en) | Manufacture of npn transistor | |
| JPS55163835A (en) | Selective liquid phase growth of on semiconductor region | |
| JPS5694678A (en) | Manufacture of lightemitting diode | |
| JPS5361577A (en) | Growing method for horizontally pulled ribbon crystal | |
| JPS5649520A (en) | Vapor growth of compound semiconductor | |
| JPS57184229A (en) | Manufacture of semiconductor device | |
| GB1376973A (en) | Method of growing monocrystalline semiconductor material | |
| JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
| JPS5289599A (en) | Liquid phase eptaxial growth | |
| FR2137160A1 (en) | Monocrystalline semiconductor substrate prodn - with low specific resistance | |
| JPS52106673A (en) | Crystal growing method and device thereof | |
| JPS57199287A (en) | Semiconductor luminous element and manufacture thereof | |
| JPS5734329A (en) | Manufacture of simiconductor device | |
| JPS5673700A (en) | Liquid phase epitaxially growing method | |
| JPS57197823A (en) | Liquid phase epitaxial growing method | |
| JPS5724536A (en) | Preparation of semiconductor device | |
| JPS5747798A (en) | Liquid phase epitaxial growing method | |
| JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
| JPS52155188A (en) | Liquid phase growth of semiconductor crystal | |
| JPS5649519A (en) | Vapor growth of compound semiconductor | |
| JPS5312275A (en) | Production of semiconductor device | |
| JPS5768019A (en) | Gas phase growing method | |
| JPS52129374A (en) | Production of semiconductor substrates | |
| JPS52153375A (en) | Vapor phase growth method for g#a# | |
| JPS5232669A (en) | Liquid-phase epitaxial growth method |