FR2137160A1 - Monocrystalline semiconductor substrate prodn - with low specific resistance - Google Patents

Monocrystalline semiconductor substrate prodn - with low specific resistance

Info

Publication number
FR2137160A1
FR2137160A1 FR7117552A FR7117552A FR2137160A1 FR 2137160 A1 FR2137160 A1 FR 2137160A1 FR 7117552 A FR7117552 A FR 7117552A FR 7117552 A FR7117552 A FR 7117552A FR 2137160 A1 FR2137160 A1 FR 2137160A1
Authority
FR
France
Prior art keywords
prodn
pref
semiconductor substrate
specific resistance
low specific
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7117552A
Other languages
French (fr)
Other versions
FR2137160B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7117552A priority Critical patent/FR2137160A1/en
Priority to DE19722223261 priority patent/DE2223261A1/en
Priority to NL7206465A priority patent/NL7206465A/xx
Publication of FR2137160A1 publication Critical patent/FR2137160A1/en
Application granted granted Critical
Publication of FR2137160B1 publication Critical patent/FR2137160B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth

Abstract

Process comprising doping a semiconductor material with a n- or p- dopant, whilst effecting epitaxial growth in the liquid phase starting from a monocrystalline nucleus immersed in a soln. of the semiconductor in the doping agent is improved in that the deposition of the material on the crystallisation nucleus is caused by a mutual equilibrium shift between the solid phase and the liquid phase, and the rate of this shift and, hence, the growth of the monocrystal is modified by means of controlling agent, pref. by cooling at a constant speed or by evaporating the dopant at a constant rate. Thick monocrystalline substrate (pref. Si or Be) can be produced; the pref dopants are As and Ga. The process is esp. suitable for the prodn. of semiconductors for very high frequency systems.
FR7117552A 1971-05-14 1971-05-14 Monocrystalline semiconductor substrate prodn - with low specific resistance Granted FR2137160A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7117552A FR2137160A1 (en) 1971-05-14 1971-05-14 Monocrystalline semiconductor substrate prodn - with low specific resistance
DE19722223261 DE2223261A1 (en) 1971-05-14 1972-05-12 Method and apparatus for manufacturing a single crystal substrate with good resistivity
NL7206465A NL7206465A (en) 1971-05-14 1972-05-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7117552A FR2137160A1 (en) 1971-05-14 1971-05-14 Monocrystalline semiconductor substrate prodn - with low specific resistance

Publications (2)

Publication Number Publication Date
FR2137160A1 true FR2137160A1 (en) 1972-12-29
FR2137160B1 FR2137160B1 (en) 1973-05-11

Family

ID=9077062

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7117552A Granted FR2137160A1 (en) 1971-05-14 1971-05-14 Monocrystalline semiconductor substrate prodn - with low specific resistance

Country Status (3)

Country Link
DE (1) DE2223261A1 (en)
FR (1) FR2137160A1 (en)
NL (1) NL7206465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250769A2 (en) * 1986-05-23 1988-01-07 TELEFUNKEN electronic GmbH Process for the epitaxial deposition of thin films of pseudo-binary single-crystalline semiconductor material on single-crystalline substrates
WO2013050927A1 (en) * 2011-10-05 2013-04-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of forming a crystallised silicon layer on the surface of a plurality of substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250769A2 (en) * 1986-05-23 1988-01-07 TELEFUNKEN electronic GmbH Process for the epitaxial deposition of thin films of pseudo-binary single-crystalline semiconductor material on single-crystalline substrates
EP0250769A3 (en) * 1986-05-23 1988-12-14 TELEFUNKEN electronic GmbH Process for the epitaxial deposition of thin films of pseudo-binary single-crystalline semiconductor material on single-crystalline substrates
WO2013050927A1 (en) * 2011-10-05 2013-04-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of forming a crystallised silicon layer on the surface of a plurality of substrates
FR2981194A1 (en) * 2011-10-05 2013-04-12 Commissariat Energie Atomique PROCESS FOR FORMING A CRYSTALLIZED SILICON LAYER IN SURFACE OF MULTIPLE SUBSTRATES

Also Published As

Publication number Publication date
DE2223261A1 (en) 1972-11-23
FR2137160B1 (en) 1973-05-11
NL7206465A (en) 1972-11-16

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Legal Events

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