JPS55157228A - Method of growing epitaxially in liquid phase - Google Patents
Method of growing epitaxially in liquid phaseInfo
- Publication number
- JPS55157228A JPS55157228A JP6634379A JP6634379A JPS55157228A JP S55157228 A JPS55157228 A JP S55157228A JP 6634379 A JP6634379 A JP 6634379A JP 6634379 A JP6634379 A JP 6634379A JP S55157228 A JPS55157228 A JP S55157228A
- Authority
- JP
- Japan
- Prior art keywords
- growing
- liquid
- substrate
- solute
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To restrict occurrence of defect in a laminate in a growing layer by providing supersaturation degree in melting growing liquid directly before starting the growing step in a temperature difference process. CONSTITUTION:Melting growing liquid is retained at predetermined temperature for predetermined time to completely saturate solute in the growing liquid, and a substrate is brought into contact with the growing liquid to cool the liquid to the degree that fine crystals are not deposited in the liquid or at the periphery immediately before starting the growing step. Thus, the solute is oversaturated in the growing liquid, and the substrate is further brought into contact with the growing liquid to retain the predetermined growing temperature. As a result, compound semiconductor having different composition from the substrate is grown in single or more layers so as to restrict the occurrence of the defect in the laminate in the growing crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6634379A JPS55157228A (en) | 1979-05-28 | 1979-05-28 | Method of growing epitaxially in liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6634379A JPS55157228A (en) | 1979-05-28 | 1979-05-28 | Method of growing epitaxially in liquid phase |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55157228A true JPS55157228A (en) | 1980-12-06 |
Family
ID=13313110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6634379A Pending JPS55157228A (en) | 1979-05-28 | 1979-05-28 | Method of growing epitaxially in liquid phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55157228A (en) |
-
1979
- 1979-05-28 JP JP6634379A patent/JPS55157228A/en active Pending
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