JPS57106600A - Molecular beam crystal growth method and dopant molecular beam generator - Google Patents

Molecular beam crystal growth method and dopant molecular beam generator

Info

Publication number
JPS57106600A
JPS57106600A JP18344180A JP18344180A JPS57106600A JP S57106600 A JPS57106600 A JP S57106600A JP 18344180 A JP18344180 A JP 18344180A JP 18344180 A JP18344180 A JP 18344180A JP S57106600 A JPS57106600 A JP S57106600A
Authority
JP
Japan
Prior art keywords
molecular beam
dopant
crystal growth
resistor
growth method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18344180A
Other languages
Japanese (ja)
Other versions
JPS6246520B2 (en
Inventor
Tomonori Ishikawa
Sukehisa Hiyamizu
Toshio Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18344180A priority Critical patent/JPS57106600A/en
Publication of JPS57106600A publication Critical patent/JPS57106600A/en
Publication of JPS6246520B2 publication Critical patent/JPS6246520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To avert the inclusion of surplus impurities and improve the rate of crystal growth by performing the doping of a low vapor pressure material in a molecular beam crystal growth method by electroheating a resistor consisting of the dopant per se.
CONSTITUTION: In forming a thin film of, for example, Si-doped GaAs single crystal, electrodes 12 are provided (a symbol 13 is a lead wire) are provided at both ends of a resistor made of Si slendered in a central part M (where Ga or As is contained to provide conductivity) 10, and this is disposed in a shroud 6 cooled with liquid nitrogen, whereby a cell for Si dopant is formed (a symbol 11 is molecular beam generating port). Doping is effected by using the above- mentioned cell and electroheating the Si resistor, whereby a high-concn. silicon doped GaAs epitaxial crystal of good quality is formed at a high rate of growth without using conventional Knudsen cells.
COPYRIGHT: (C)1982,JPO&Japio
JP18344180A 1980-12-24 1980-12-24 Molecular beam crystal growth method and dopant molecular beam generator Granted JPS57106600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18344180A JPS57106600A (en) 1980-12-24 1980-12-24 Molecular beam crystal growth method and dopant molecular beam generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18344180A JPS57106600A (en) 1980-12-24 1980-12-24 Molecular beam crystal growth method and dopant molecular beam generator

Publications (2)

Publication Number Publication Date
JPS57106600A true JPS57106600A (en) 1982-07-02
JPS6246520B2 JPS6246520B2 (en) 1987-10-02

Family

ID=16135818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18344180A Granted JPS57106600A (en) 1980-12-24 1980-12-24 Molecular beam crystal growth method and dopant molecular beam generator

Country Status (1)

Country Link
JP (1) JPS57106600A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605097A (en) * 1983-06-06 1985-01-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Silicon source for molecular beam epitaxy
JPS61208823A (en) * 1985-03-14 1986-09-17 Nec Corp Doping method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
RCA REVIEW=1962 *
REVIEW OF SCIENTIFIC INSTRUMENTS=1963 *
SURFACE SCIENCE=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605097A (en) * 1983-06-06 1985-01-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Silicon source for molecular beam epitaxy
JPH0360799B2 (en) * 1983-06-06 1991-09-17 Intaanashonaru Bijinesu Mashiinzu Corp
JPS61208823A (en) * 1985-03-14 1986-09-17 Nec Corp Doping method

Also Published As

Publication number Publication date
JPS6246520B2 (en) 1987-10-02

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