JPS57115821A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57115821A
JPS57115821A JP233281A JP233281A JPS57115821A JP S57115821 A JPS57115821 A JP S57115821A JP 233281 A JP233281 A JP 233281A JP 233281 A JP233281 A JP 233281A JP S57115821 A JPS57115821 A JP S57115821A
Authority
JP
Japan
Prior art keywords
region
molecular beam
substrate
layer
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP233281A
Other languages
Japanese (ja)
Inventor
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP233281A priority Critical patent/JPS57115821A/en
Publication of JPS57115821A publication Critical patent/JPS57115821A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enable to easily form the base region of the tunnel triode for the subject semiconductor device by a method wherein the growing speed of a vapor-phase growing layer is varied in accordance with the regions on a substrate, and also impurities are mixed in the grown layer when the layer is formed. CONSTITUTION:Between the prescribed region 15 on the substrate 11 and the molecular beam source of a substrate constituting element, a substance to be used to control the amount of molecular beam reaching the prescribed region 15 is arranged, and crystals are grown on the substrate 11 using a molecular beam. At the same time, the molecular beam source to be used for impurity doping is arranged in such a manner that the amount of impurity molecular beam going to the region 15 will not be restricted, and then impurities are doped. Through these procedures, the region 15 is thinly formed and the density of which is increased. Accordingly, as the region 15 is utilized as the base region for the tunnel triode in a grown layer 17 and the parts other than the region 15 is also utilized to pick out an electrode, the necessary electric signal can be supplied to the thinly formed base region. On this layer 17, a grown layer 18 is additionally formed using a molecular beam, and the tunnel triode is formed on the substrate 17.
JP233281A 1981-01-09 1981-01-09 Manufacture of semiconductor device Pending JPS57115821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP233281A JPS57115821A (en) 1981-01-09 1981-01-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP233281A JPS57115821A (en) 1981-01-09 1981-01-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57115821A true JPS57115821A (en) 1982-07-19

Family

ID=11526348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP233281A Pending JPS57115821A (en) 1981-01-09 1981-01-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57115821A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188128A (en) * 1982-04-27 1983-11-02 Fujitsu Ltd Method for growth of molecular beam crystallization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188128A (en) * 1982-04-27 1983-11-02 Fujitsu Ltd Method for growth of molecular beam crystallization
JPH0315333B2 (en) * 1982-04-27 1991-02-28 Fujitsu Ltd

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