JPS5795622A - Method for adding impurity - Google Patents

Method for adding impurity

Info

Publication number
JPS5795622A
JPS5795622A JP17164680A JP17164680A JPS5795622A JP S5795622 A JPS5795622 A JP S5795622A JP 17164680 A JP17164680 A JP 17164680A JP 17164680 A JP17164680 A JP 17164680A JP S5795622 A JPS5795622 A JP S5795622A
Authority
JP
Japan
Prior art keywords
layer
growing
impurity
grown
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17164680A
Other languages
Japanese (ja)
Inventor
Hiroshi Hayashi
Kazuhisa Murata
Saburo Yamamoto
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17164680A priority Critical patent/JPS5795622A/en
Publication of JPS5795622A publication Critical patent/JPS5795622A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve controllability for the addition of extremely small quantity of impurities into a growing layer, by forming an impurity adding layer having a constant concentration on the same crystal as a source crystal by liquid phase eqitaxial growing, measuring said addition layer, and obtaining the impurity material for the liquid phase epitaxial growing. CONSTITUTION:For example, a Te added grwoing layer which is grown on a GaAs substrate is employed as a raw material of Te, when Te doped GaAs or GaAlAs is grown by the liquid phase epitaxial growing. For example, the growing layer, wherein a mol ratio of Te is about 1.2X10<-2>, is grown on the GaAs substrate, and the substrate is removed by etching. For example, said product is used as an impurity raw material instead of metal Te. In this method, the quantity of the impurity raw material to be mixed in a solution can be increased by about 100 times when the growing layer having the desired carrier concentration is formed, and sufficient measuring accuracy can be obtained. Therefore, the addition of extremely small quantity of inpurities can be facilitated, and the control property can be improved.
JP17164680A 1980-12-03 1980-12-03 Method for adding impurity Pending JPS5795622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17164680A JPS5795622A (en) 1980-12-03 1980-12-03 Method for adding impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17164680A JPS5795622A (en) 1980-12-03 1980-12-03 Method for adding impurity

Publications (1)

Publication Number Publication Date
JPS5795622A true JPS5795622A (en) 1982-06-14

Family

ID=15927064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17164680A Pending JPS5795622A (en) 1980-12-03 1980-12-03 Method for adding impurity

Country Status (1)

Country Link
JP (1) JPS5795622A (en)

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