JPS57167624A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS57167624A
JPS57167624A JP5397781A JP5397781A JPS57167624A JP S57167624 A JPS57167624 A JP S57167624A JP 5397781 A JP5397781 A JP 5397781A JP 5397781 A JP5397781 A JP 5397781A JP S57167624 A JPS57167624 A JP S57167624A
Authority
JP
Japan
Prior art keywords
molten liquid
molten
epitaxial growth
protective film
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5397781A
Other languages
Japanese (ja)
Other versions
JPH0330288B2 (en
Inventor
Ryoichi Hirano
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5397781A priority Critical patent/JPS57167624A/en
Publication of JPS57167624A publication Critical patent/JPS57167624A/en
Publication of JPH0330288B2 publication Critical patent/JPH0330288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To prevent the compound on the surface of a semiconductor crystal substrate from decomposition and thermal deterioration by a method wherein the semiconductor crystal substrate which has a protective film is put into a reaction furnace and is acted upon successively by molten liquid which dissolves the protective film only and by molten liquid which has the semiconductor as solute. CONSTITUTION:An InP crystal substrate 1 which has an InGaAsP epitaxial growth layer 2 as its protective film is put on a slideboard 4 and put into a reverberatory furnace 9 and kept in the hydrogen atmosphere unitl the temperature reaches the specified level. Then the specimen is covered by molten In6 saturated by InP by shifting molten liquid dams 5 and 7 to the right by one frame. The growth layer 2 is dissolved into the molten liquid and reaches the surface of the substrate 1. Again the specimen is covered by molten In8 by shifting the molten liquid dams 5 and 7 to the right by one frame and an InP epitaxial growth layer is obtained on the substrate 1. Further, the molten liquid dams 5 and 7 are shifted to the right another one frame and the molten liquid 8 is wiped out.
JP5397781A 1981-04-08 1981-04-08 Liquid phase epitaxial growth method Granted JPS57167624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5397781A JPS57167624A (en) 1981-04-08 1981-04-08 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5397781A JPS57167624A (en) 1981-04-08 1981-04-08 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57167624A true JPS57167624A (en) 1982-10-15
JPH0330288B2 JPH0330288B2 (en) 1991-04-26

Family

ID=12957693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5397781A Granted JPS57167624A (en) 1981-04-08 1981-04-08 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57167624A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289012A2 (en) * 1987-04-30 1988-11-02 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110262A (en) * 1975-03-25 1976-09-29 Oki Electric Ind Co Ltd HANDOTAIEKISOSEICHOHO
JPS55128894A (en) * 1979-03-27 1980-10-06 Fujitsu Ltd Semiconductor light emitting device and method of fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110262A (en) * 1975-03-25 1976-09-29 Oki Electric Ind Co Ltd HANDOTAIEKISOSEICHOHO
JPS55128894A (en) * 1979-03-27 1980-10-06 Fujitsu Ltd Semiconductor light emitting device and method of fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289012A2 (en) * 1987-04-30 1988-11-02 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer
EP0289012A3 (en) * 1987-04-30 1990-05-09 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer

Also Published As

Publication number Publication date
JPH0330288B2 (en) 1991-04-26

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