JPS5796520A - Method for forming silicon single crystal film - Google Patents

Method for forming silicon single crystal film

Info

Publication number
JPS5796520A
JPS5796520A JP17352980A JP17352980A JPS5796520A JP S5796520 A JPS5796520 A JP S5796520A JP 17352980 A JP17352980 A JP 17352980A JP 17352980 A JP17352980 A JP 17352980A JP S5796520 A JPS5796520 A JP S5796520A
Authority
JP
Japan
Prior art keywords
single crystal
silicon
crystal film
groove
drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17352980A
Other languages
Japanese (ja)
Inventor
Masakazu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17352980A priority Critical patent/JPS5796520A/en
Publication of JPS5796520A publication Critical patent/JPS5796520A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Abstract

PURPOSE:To form the single crystal film of silicon in the inside of a groove at a low temperature, by lowering a melting point by using eutectic reaction of metal and silicon, and moving a drop of metalsilicon alloy along the groove formed on the surface of an amorphous insulator substrate. CONSTITUTION:The linear groove is formed on the amorphous insulator substrate 1 such as glass, and an amorphous or polycrystal silicon film 2 is deposited in the groove. Furthermore, a gold evaporated film 3 is provided on one end of each linear groove. Then, the drop of the alloy liquid is formed by using laser light, an electron beam, and the like, the liquid drop 5 is moved by scanning the laser light and the like, and the single crystal film 4 of silicon is formed. Since the melting point is lowered by using eutectic reaction, the silicon single crystal film having small thermal strain can be obtained.
JP17352980A 1980-12-09 1980-12-09 Method for forming silicon single crystal film Pending JPS5796520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17352980A JPS5796520A (en) 1980-12-09 1980-12-09 Method for forming silicon single crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17352980A JPS5796520A (en) 1980-12-09 1980-12-09 Method for forming silicon single crystal film

Publications (1)

Publication Number Publication Date
JPS5796520A true JPS5796520A (en) 1982-06-15

Family

ID=15962212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17352980A Pending JPS5796520A (en) 1980-12-09 1980-12-09 Method for forming silicon single crystal film

Country Status (1)

Country Link
JP (1) JPS5796520A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717688A (en) * 1986-04-16 1988-01-05 Siemens Aktiengesellschaft Liquid phase epitaxy method
JPS6379787A (en) * 1986-09-22 1988-04-09 Matsushita Electric Ind Co Ltd Process for preparing thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717688A (en) * 1986-04-16 1988-01-05 Siemens Aktiengesellschaft Liquid phase epitaxy method
JPS6379787A (en) * 1986-09-22 1988-04-09 Matsushita Electric Ind Co Ltd Process for preparing thin film

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