JPS57143822A - Method for growth of pluralistically mixed crystal semiconductor - Google Patents

Method for growth of pluralistically mixed crystal semiconductor

Info

Publication number
JPS57143822A
JPS57143822A JP2910181A JP2910181A JPS57143822A JP S57143822 A JPS57143822 A JP S57143822A JP 2910181 A JP2910181 A JP 2910181A JP 2910181 A JP2910181 A JP 2910181A JP S57143822 A JPS57143822 A JP S57143822A
Authority
JP
Japan
Prior art keywords
solution
mixed crystal
dissolution
composition
danger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2910181A
Other languages
Japanese (ja)
Inventor
Kentarou Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2910181A priority Critical patent/JPS57143822A/en
Publication of JPS57143822A publication Critical patent/JPS57143822A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To cause pluralistically mixed crystal semiconductor to grow under optimum conditions by using a solution of such composition as chemical affinity of dissolution reaction to a basic mixed crystal layer which has already grown in zero or less. CONSTITUTION:The basic idea is that degree of supersaturation of solutions required for prevention against danger of dissolution can be found by plotting a curve representing that chemical affinity of dissolution reaction becomes zero on a graph of equilibration between liquid and solid phases. For instance, the areas between a liquidus line indicating that equilibrium temperature TL=640 deg.C and a curve representing A=0 represent states where precipitation and dissolution reactions can concur. In other words, it corresponds to thermodynamic instability of interface between solid and liquid phases during crystal growth, i.e. such composition of a solution as danger of dissolution of the basic mixed crystal layer can take place. Therefore, for the purpose of preventing such danger, composition of the solution should at least fall in the area above the curve indicating A=0, and then a degree of supersaturation of a solution that is required for the basic mixed crystal layer not to be dissolved is to be acquired from equilibrium temperature and temperature difference corresponding to the composition of the solution.
JP2910181A 1981-02-27 1981-02-27 Method for growth of pluralistically mixed crystal semiconductor Pending JPS57143822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2910181A JPS57143822A (en) 1981-02-27 1981-02-27 Method for growth of pluralistically mixed crystal semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2910181A JPS57143822A (en) 1981-02-27 1981-02-27 Method for growth of pluralistically mixed crystal semiconductor

Publications (1)

Publication Number Publication Date
JPS57143822A true JPS57143822A (en) 1982-09-06

Family

ID=12266948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2910181A Pending JPS57143822A (en) 1981-02-27 1981-02-27 Method for growth of pluralistically mixed crystal semiconductor

Country Status (1)

Country Link
JP (1) JPS57143822A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184827A (en) * 1984-10-02 1986-04-30 Sharp Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184827A (en) * 1984-10-02 1986-04-30 Sharp Corp Manufacture of semiconductor device
JPH0310222B2 (en) * 1984-10-02 1991-02-13 Sharp Kk

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