JPS552982A - Semi-conductor layer thickness measuring method - Google Patents
Semi-conductor layer thickness measuring methodInfo
- Publication number
- JPS552982A JPS552982A JP7687478A JP7687478A JPS552982A JP S552982 A JPS552982 A JP S552982A JP 7687478 A JP7687478 A JP 7687478A JP 7687478 A JP7687478 A JP 7687478A JP S552982 A JPS552982 A JP S552982A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epithaxial
- crystal
- type
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
PURPOSE: To make it possible to conduct optical measurement of an object by turning its required region into a multi-crystal in such a manner that an insulator is formed on the required region on a base plate prior to formation of an epithaxial layer.
CONSTITUTION: An insulator layer (e.g. an approimately 500Å thick film 5 of SiO2) is formed on a required region on the top surface of a base plate 4 made of such a material as phosphoric silicon. And then, an n type epithaxial layer 6 is formed. At this time, although the n type epithaxial layer 6 on the region free of SiO2 film is a single (or mono) crystal, the n type epithaxial layer 7 on the SiO2 layer is to become a multi-crystal. Now, the multi-crystal n type epithaxial layer 7 is selectively removed by using a mixed solution of fluoric acid and nitric acid. And then, the SiO2 film is removed by using fluoric acid. Now, measurement is made on difference in height between thus exposed surface of the phosphoric silicon base plate 4 and the surface of the single- (or mono-) crystal n type epithaxial layer 6.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7687478A JPS552982A (en) | 1978-06-23 | 1978-06-23 | Semi-conductor layer thickness measuring method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7687478A JPS552982A (en) | 1978-06-23 | 1978-06-23 | Semi-conductor layer thickness measuring method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS552982A true JPS552982A (en) | 1980-01-10 |
Family
ID=13617774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7687478A Pending JPS552982A (en) | 1978-06-23 | 1978-06-23 | Semi-conductor layer thickness measuring method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS552982A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0112162A2 (en) | 1982-12-13 | 1984-06-27 | Konica Corporation | Light-sensitive silver halide photographic material |
US4584886A (en) * | 1983-09-26 | 1986-04-29 | Kabushiki Kaisha Toshiba | Resolution device for semiconductor thin films |
EP0514675A1 (en) | 1991-04-22 | 1992-11-25 | Fuji Photo Film Co., Ltd. | Silver halide photographic materials and method for processing the same |
EP0563708A1 (en) | 1992-03-19 | 1993-10-06 | Fuji Photo Film Co., Ltd. | Silver halide photographic emulsion and light-sensitive material using the same |
WO1996013755A1 (en) | 1994-10-26 | 1996-05-09 | Eastman Kodak Company | Photographic emulsions of enhanced sensitivity |
EP1624337A2 (en) | 2004-08-02 | 2006-02-08 | Fuji Photo Film Co., Ltd. | Silver halide holographic sensitive material and system for taking holographic images by using the same |
EP1691237A2 (en) | 2005-02-15 | 2006-08-16 | Fuji Photo Film Co., Ltd. | Holographic recording material and holographic recording method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4840656A (en) * | 1971-09-29 | 1973-06-14 |
-
1978
- 1978-06-23 JP JP7687478A patent/JPS552982A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4840656A (en) * | 1971-09-29 | 1973-06-14 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0112162A2 (en) | 1982-12-13 | 1984-06-27 | Konica Corporation | Light-sensitive silver halide photographic material |
US4584886A (en) * | 1983-09-26 | 1986-04-29 | Kabushiki Kaisha Toshiba | Resolution device for semiconductor thin films |
EP0514675A1 (en) | 1991-04-22 | 1992-11-25 | Fuji Photo Film Co., Ltd. | Silver halide photographic materials and method for processing the same |
EP0563708A1 (en) | 1992-03-19 | 1993-10-06 | Fuji Photo Film Co., Ltd. | Silver halide photographic emulsion and light-sensitive material using the same |
WO1996013755A1 (en) | 1994-10-26 | 1996-05-09 | Eastman Kodak Company | Photographic emulsions of enhanced sensitivity |
EP1624337A2 (en) | 2004-08-02 | 2006-02-08 | Fuji Photo Film Co., Ltd. | Silver halide holographic sensitive material and system for taking holographic images by using the same |
EP1691237A2 (en) | 2005-02-15 | 2006-08-16 | Fuji Photo Film Co., Ltd. | Holographic recording material and holographic recording method |
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