JPS552982A - Semi-conductor layer thickness measuring method - Google Patents

Semi-conductor layer thickness measuring method

Info

Publication number
JPS552982A
JPS552982A JP7687478A JP7687478A JPS552982A JP S552982 A JPS552982 A JP S552982A JP 7687478 A JP7687478 A JP 7687478A JP 7687478 A JP7687478 A JP 7687478A JP S552982 A JPS552982 A JP S552982A
Authority
JP
Japan
Prior art keywords
layer
epithaxial
crystal
type
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7687478A
Other languages
Japanese (ja)
Inventor
Toshio Sugawa
Takeshi Konuma
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7687478A priority Critical patent/JPS552982A/en
Publication of JPS552982A publication Critical patent/JPS552982A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to conduct optical measurement of an object by turning its required region into a multi-crystal in such a manner that an insulator is formed on the required region on a base plate prior to formation of an epithaxial layer.
CONSTITUTION: An insulator layer (e.g. an approimately 500Å thick film 5 of SiO2) is formed on a required region on the top surface of a base plate 4 made of such a material as phosphoric silicon. And then, an n type epithaxial layer 6 is formed. At this time, although the n type epithaxial layer 6 on the region free of SiO2 film is a single (or mono) crystal, the n type epithaxial layer 7 on the SiO2 layer is to become a multi-crystal. Now, the multi-crystal n type epithaxial layer 7 is selectively removed by using a mixed solution of fluoric acid and nitric acid. And then, the SiO2 film is removed by using fluoric acid. Now, measurement is made on difference in height between thus exposed surface of the phosphoric silicon base plate 4 and the surface of the single- (or mono-) crystal n type epithaxial layer 6.
COPYRIGHT: (C)1980,JPO&Japio
JP7687478A 1978-06-23 1978-06-23 Semi-conductor layer thickness measuring method Pending JPS552982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7687478A JPS552982A (en) 1978-06-23 1978-06-23 Semi-conductor layer thickness measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7687478A JPS552982A (en) 1978-06-23 1978-06-23 Semi-conductor layer thickness measuring method

Publications (1)

Publication Number Publication Date
JPS552982A true JPS552982A (en) 1980-01-10

Family

ID=13617774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7687478A Pending JPS552982A (en) 1978-06-23 1978-06-23 Semi-conductor layer thickness measuring method

Country Status (1)

Country Link
JP (1) JPS552982A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112162A2 (en) 1982-12-13 1984-06-27 Konica Corporation Light-sensitive silver halide photographic material
US4584886A (en) * 1983-09-26 1986-04-29 Kabushiki Kaisha Toshiba Resolution device for semiconductor thin films
EP0514675A1 (en) 1991-04-22 1992-11-25 Fuji Photo Film Co., Ltd. Silver halide photographic materials and method for processing the same
EP0563708A1 (en) 1992-03-19 1993-10-06 Fuji Photo Film Co., Ltd. Silver halide photographic emulsion and light-sensitive material using the same
WO1996013755A1 (en) 1994-10-26 1996-05-09 Eastman Kodak Company Photographic emulsions of enhanced sensitivity
EP1624337A2 (en) 2004-08-02 2006-02-08 Fuji Photo Film Co., Ltd. Silver halide holographic sensitive material and system for taking holographic images by using the same
EP1691237A2 (en) 2005-02-15 2006-08-16 Fuji Photo Film Co., Ltd. Holographic recording material and holographic recording method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840656A (en) * 1971-09-29 1973-06-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840656A (en) * 1971-09-29 1973-06-14

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112162A2 (en) 1982-12-13 1984-06-27 Konica Corporation Light-sensitive silver halide photographic material
US4584886A (en) * 1983-09-26 1986-04-29 Kabushiki Kaisha Toshiba Resolution device for semiconductor thin films
EP0514675A1 (en) 1991-04-22 1992-11-25 Fuji Photo Film Co., Ltd. Silver halide photographic materials and method for processing the same
EP0563708A1 (en) 1992-03-19 1993-10-06 Fuji Photo Film Co., Ltd. Silver halide photographic emulsion and light-sensitive material using the same
WO1996013755A1 (en) 1994-10-26 1996-05-09 Eastman Kodak Company Photographic emulsions of enhanced sensitivity
EP1624337A2 (en) 2004-08-02 2006-02-08 Fuji Photo Film Co., Ltd. Silver halide holographic sensitive material and system for taking holographic images by using the same
EP1691237A2 (en) 2005-02-15 2006-08-16 Fuji Photo Film Co., Ltd. Holographic recording material and holographic recording method

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