JPS57180142A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180142A
JPS57180142A JP6502881A JP6502881A JPS57180142A JP S57180142 A JPS57180142 A JP S57180142A JP 6502881 A JP6502881 A JP 6502881A JP 6502881 A JP6502881 A JP 6502881A JP S57180142 A JPS57180142 A JP S57180142A
Authority
JP
Japan
Prior art keywords
film
mask
substrate
layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6502881A
Other languages
Japanese (ja)
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6502881A priority Critical patent/JPS57180142A/en
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS57180142A publication Critical patent/JPS57180142A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Abstract

PURPOSE:To obtain a fine element separation region by a method wherein an insulation film is formed on a semiconductor substrate and an element forming region is covered by a mask and inversion prohibiting layers are provided to the both sides of a mask by ion-implantation through the insulation film and the insulation film is left on those inversion prohibiting layers by etching. CONSTITUTION:An SiO2 film 102 is formed on a P type Si substrate 101 and a mask 103 of a resistor film is formed corresponding to an element forming region. Shallow P<+> type inversion prohibiting layers 104 are formed in the substrate 101 to the both sides of the mask 103 by boron ion-implantation. Then, an Al film is formed on the whole surface and the Al film 1051 on the mask 103 and the Al film 1052 on the film 102 is made discontinuous and the mask 103 is removed with the film 105 on it. Then the film 102 is etched by using the remaining film 1052 as a mask and a thick field SiO2 film 106 composed of the film 102 is formed on the layer 104. After that a P type polycrystal Si layer 107' is accumulated on the substrate 101 surrounded by the film 106 and is irradiated by laser beam and transformed into a single crystal Si layer 109 and used as an element forming region.
JP6502881A 1980-10-02 1981-04-28 Manufacture of semiconductor device Pending JPS57180142A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6502881A JPS57180142A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6502881A JPS57180142A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57180142A true JPS57180142A (en) 1982-11-06

Family

ID=13275103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6502881A Pending JPS57180142A (en) 1980-10-02 1981-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0283915A (en) * 1988-09-20 1990-03-26 Ricoh Co Ltd Manufacture of semiconductor single crystal thin film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160481A (en) * 1974-11-25 1976-05-26 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO
JPS54121683A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160481A (en) * 1974-11-25 1976-05-26 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO
JPS54121683A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Semiconductor device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0283915A (en) * 1988-09-20 1990-03-26 Ricoh Co Ltd Manufacture of semiconductor single crystal thin film

Similar Documents

Publication Publication Date Title
JPS57180142A (en) Manufacture of semiconductor device
JPS56146247A (en) Manufacture of semiconductor device
JPS55113343A (en) Manufacture of semiconductor device
JPS57130431A (en) Manufacture of semiconductor device
JPS56140641A (en) Manufacture of semiconductor device
JPS5512767A (en) Semiconductor device manufacturing method
JPS57180144A (en) Manufacture of semiconductor device
JPS57111042A (en) Manufacture of semiconductor device
JPS5694655A (en) Semiconductor device
JPS57118631A (en) Manufacture of semiconductor substrate
JPS5513953A (en) Complementary integrated circuit
JPS5742143A (en) Manufacture of semiconductor device
JPS57199231A (en) Manufacture of semiconductor device
JPS56112727A (en) Manufacture of x-ray mask
JPS56111241A (en) Preparation of semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS54139486A (en) Manufacture of semiconductor device
JPS5666056A (en) Manufacture of semiconductor device
JPS5530844A (en) Semiconductor device and its manufacturing method
JPS57180143A (en) Manufacture of semiconductor device
JPS56169348A (en) Semiconductor device
JPS5791537A (en) Manufacture of semiconductor device
JPS55110036A (en) Method for preparation of semiconductor device
JPS57202756A (en) Manufacture of semiconductor device
JPS5484979A (en) Production of semiconductor device