JPS56103438A - Evaluation of semiconductor crystal - Google Patents
Evaluation of semiconductor crystalInfo
- Publication number
- JPS56103438A JPS56103438A JP602280A JP602280A JPS56103438A JP S56103438 A JPS56103438 A JP S56103438A JP 602280 A JP602280 A JP 602280A JP 602280 A JP602280 A JP 602280A JP S56103438 A JPS56103438 A JP S56103438A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- evaluation
- nh4oh
- mixture
- etch pit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 4
- 238000011156 evaluation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 2
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 240000002329 Inga feuillei Species 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To enable clear evaluation of the dislocation density by etching a crystal of InGaAs with a mixture of NH4OH and H2O2. CONSTITUTION:In0.53 Ga0.47 As is laminated on the surface (100) of an InGa substrate and etched at a room temperature with the mixture of 30% NH4OH, 50% H2O2 and pure water at an equal capacity. When the surface of a wafer is observed with a microscope, an an etch pit is noted corresponding to the dislocation of a crystal. The capacity ratio can be changed within the mixing ratio range of NH4OH4: H2O2:H2O=1-3:1:0-3. But beyond this range, sufficient etch pit fails to be generated. This allows clear evaluation of the dislocation density thereby providing effective information for crystal growth and element production.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP602280A JPS56103438A (en) | 1980-01-22 | 1980-01-22 | Evaluation of semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP602280A JPS56103438A (en) | 1980-01-22 | 1980-01-22 | Evaluation of semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103438A true JPS56103438A (en) | 1981-08-18 |
| JPS626654B2 JPS626654B2 (en) | 1987-02-12 |
Family
ID=11627055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP602280A Granted JPS56103438A (en) | 1980-01-22 | 1980-01-22 | Evaluation of semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103438A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5142474A (en) * | 1974-10-09 | 1976-04-10 | Hitachi Ltd | Kagobutsuhandotaino shorihoho |
-
1980
- 1980-01-22 JP JP602280A patent/JPS56103438A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5142474A (en) * | 1974-10-09 | 1976-04-10 | Hitachi Ltd | Kagobutsuhandotaino shorihoho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS626654B2 (en) | 1987-02-12 |
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