JPS5354478A - Anodic oxidation method - Google Patents
Anodic oxidation methodInfo
- Publication number
- JPS5354478A JPS5354478A JP12990876A JP12990876A JPS5354478A JP S5354478 A JPS5354478 A JP S5354478A JP 12990876 A JP12990876 A JP 12990876A JP 12990876 A JP12990876 A JP 12990876A JP S5354478 A JPS5354478 A JP S5354478A
- Authority
- JP
- Japan
- Prior art keywords
- grown
- anodic oxidation
- oxidation method
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
- Weting (AREA)
Abstract
PURPOSE: To obtain a grown layer free from any crystal defects and dislocation even when the epitaxial layer of a low resistivity is grown on a substrate of a high resistivity by removing the peripheral part of the epitaxial layer grown on a semiconductor substrate and anodic oxidizing the epitaxial layer in this state.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12990876A JPS5354478A (en) | 1976-10-27 | 1976-10-27 | Anodic oxidation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12990876A JPS5354478A (en) | 1976-10-27 | 1976-10-27 | Anodic oxidation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5354478A true JPS5354478A (en) | 1978-05-17 |
JPS6126212B2 JPS6126212B2 (en) | 1986-06-19 |
Family
ID=15021356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12990876A Granted JPS5354478A (en) | 1976-10-27 | 1976-10-27 | Anodic oxidation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5354478A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0447747Y2 (en) * | 1986-08-25 | 1992-11-11 |
-
1976
- 1976-10-27 JP JP12990876A patent/JPS5354478A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6126212B2 (en) | 1986-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5354478A (en) | Anodic oxidation method | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS51139263A (en) | Method of selective oxidation of silicon substrate | |
JPS52110570A (en) | Forming method of silicon epitaxial layer | |
JPS5211858A (en) | Crystal growth method | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5288276A (en) | Liquid-phase epitaxial growth | |
JPS52131462A (en) | Manufacture of semiconductor device | |
JPS5384457A (en) | Liquid-phase epitaxial growth method | |
JPS53144690A (en) | Production of semiconductor device | |
JPS52117900A (en) | Growing method for single crystal thin film of bismuth oxide compounds | |
JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
JPS5470783A (en) | Forming method for separate oxide film of semiconductor device | |
JPS5245270A (en) | Semiconductor device | |
JPS52106271A (en) | Liquid-phase epitaxial growth method | |
JPS5339872A (en) | Etching method of wafers | |
JPS5244193A (en) | Epitaxial growth method | |
JPS5591814A (en) | Manufacture of semiconductor device | |
JPS5391635A (en) | Forming method for magnetic film pattern | |
JPS52117550A (en) | Electrode formation method | |
JPS5391572A (en) | Liquid-phase growth method for semiconductor crystal | |
JPS53110469A (en) | Anode oxidation method | |
JPS5326662A (en) | Manufacture of semiconductor device | |
JPS5347271A (en) | Selective liquid growth method of semiconductor crystal | |
JPS5322382A (en) | Production of dielectric isolating substrate |