JPS5354478A - Anodic oxidation method - Google Patents

Anodic oxidation method

Info

Publication number
JPS5354478A
JPS5354478A JP12990876A JP12990876A JPS5354478A JP S5354478 A JPS5354478 A JP S5354478A JP 12990876 A JP12990876 A JP 12990876A JP 12990876 A JP12990876 A JP 12990876A JP S5354478 A JPS5354478 A JP S5354478A
Authority
JP
Japan
Prior art keywords
grown
anodic oxidation
oxidation method
epitaxial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12990876A
Other languages
Japanese (ja)
Other versions
JPS6126212B2 (en
Inventor
Motoki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12990876A priority Critical patent/JPS5354478A/en
Publication of JPS5354478A publication Critical patent/JPS5354478A/en
Publication of JPS6126212B2 publication Critical patent/JPS6126212B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain a grown layer free from any crystal defects and dislocation even when the epitaxial layer of a low resistivity is grown on a substrate of a high resistivity by removing the peripheral part of the epitaxial layer grown on a semiconductor substrate and anodic oxidizing the epitaxial layer in this state.
COPYRIGHT: (C)1978,JPO&Japio
JP12990876A 1976-10-27 1976-10-27 Anodic oxidation method Granted JPS5354478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12990876A JPS5354478A (en) 1976-10-27 1976-10-27 Anodic oxidation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12990876A JPS5354478A (en) 1976-10-27 1976-10-27 Anodic oxidation method

Publications (2)

Publication Number Publication Date
JPS5354478A true JPS5354478A (en) 1978-05-17
JPS6126212B2 JPS6126212B2 (en) 1986-06-19

Family

ID=15021356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12990876A Granted JPS5354478A (en) 1976-10-27 1976-10-27 Anodic oxidation method

Country Status (1)

Country Link
JP (1) JPS5354478A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0447747Y2 (en) * 1986-08-25 1992-11-11

Also Published As

Publication number Publication date
JPS6126212B2 (en) 1986-06-19

Similar Documents

Publication Publication Date Title
JPS5354478A (en) Anodic oxidation method
JPS53108389A (en) Manufacture for semiconductor device
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5211858A (en) Crystal growth method
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5288276A (en) Liquid-phase epitaxial growth
JPS52131462A (en) Manufacture of semiconductor device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS53144690A (en) Production of semiconductor device
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS5470783A (en) Forming method for separate oxide film of semiconductor device
JPS5245270A (en) Semiconductor device
JPS52106271A (en) Liquid-phase epitaxial growth method
JPS5339872A (en) Etching method of wafers
JPS5244193A (en) Epitaxial growth method
JPS5591814A (en) Manufacture of semiconductor device
JPS5391635A (en) Forming method for magnetic film pattern
JPS52117550A (en) Electrode formation method
JPS5391572A (en) Liquid-phase growth method for semiconductor crystal
JPS53110469A (en) Anode oxidation method
JPS5326662A (en) Manufacture of semiconductor device
JPS5347271A (en) Selective liquid growth method of semiconductor crystal
JPS5322382A (en) Production of dielectric isolating substrate