JPS5347271A - Selective liquid growth method of semiconductor crystal - Google Patents

Selective liquid growth method of semiconductor crystal

Info

Publication number
JPS5347271A
JPS5347271A JP12244476A JP12244476A JPS5347271A JP S5347271 A JPS5347271 A JP S5347271A JP 12244476 A JP12244476 A JP 12244476A JP 12244476 A JP12244476 A JP 12244476A JP S5347271 A JPS5347271 A JP S5347271A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
liquid growth
growth method
selective liquid
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12244476A
Other languages
Japanese (ja)
Other versions
JPS5816332B2 (en
Inventor
Shigeru Mitsui
Mutsuyuki Otsubo
Osamu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12244476A priority Critical patent/JPS5816332B2/en
Publication of JPS5347271A publication Critical patent/JPS5347271A/en
Publication of JPS5816332B2 publication Critical patent/JPS5816332B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: Liquid growth is performed in the state where a metal film has been formed on a mask and a semiconductor substrae exposed from the mask, and epitaxial growth is performed to a uniform thickness over the entire region of the semiconductor crystal exposed from the mask.
COPYRIGHT: (C)1978,JPO&Japio
JP12244476A 1976-10-12 1976-10-12 Selective liquid phase growth method for semiconductor crystals Expired JPS5816332B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12244476A JPS5816332B2 (en) 1976-10-12 1976-10-12 Selective liquid phase growth method for semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12244476A JPS5816332B2 (en) 1976-10-12 1976-10-12 Selective liquid phase growth method for semiconductor crystals

Publications (2)

Publication Number Publication Date
JPS5347271A true JPS5347271A (en) 1978-04-27
JPS5816332B2 JPS5816332B2 (en) 1983-03-30

Family

ID=14835992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12244476A Expired JPS5816332B2 (en) 1976-10-12 1976-10-12 Selective liquid phase growth method for semiconductor crystals

Country Status (1)

Country Link
JP (1) JPS5816332B2 (en)

Also Published As

Publication number Publication date
JPS5816332B2 (en) 1983-03-30

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