JPS5347271A - Selective liquid growth method of semiconductor crystal - Google Patents
Selective liquid growth method of semiconductor crystalInfo
- Publication number
- JPS5347271A JPS5347271A JP12244476A JP12244476A JPS5347271A JP S5347271 A JPS5347271 A JP S5347271A JP 12244476 A JP12244476 A JP 12244476A JP 12244476 A JP12244476 A JP 12244476A JP S5347271 A JPS5347271 A JP S5347271A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- liquid growth
- growth method
- selective liquid
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: Liquid growth is performed in the state where a metal film has been formed on a mask and a semiconductor substrae exposed from the mask, and epitaxial growth is performed to a uniform thickness over the entire region of the semiconductor crystal exposed from the mask.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12244476A JPS5816332B2 (en) | 1976-10-12 | 1976-10-12 | Selective liquid phase growth method for semiconductor crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12244476A JPS5816332B2 (en) | 1976-10-12 | 1976-10-12 | Selective liquid phase growth method for semiconductor crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5347271A true JPS5347271A (en) | 1978-04-27 |
JPS5816332B2 JPS5816332B2 (en) | 1983-03-30 |
Family
ID=14835992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12244476A Expired JPS5816332B2 (en) | 1976-10-12 | 1976-10-12 | Selective liquid phase growth method for semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5816332B2 (en) |
-
1976
- 1976-10-12 JP JP12244476A patent/JPS5816332B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5816332B2 (en) | 1983-03-30 |
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