JPS5741824B2 - - Google Patents

Info

Publication number
JPS5741824B2
JPS5741824B2 JP54069001A JP6900179A JPS5741824B2 JP S5741824 B2 JPS5741824 B2 JP S5741824B2 JP 54069001 A JP54069001 A JP 54069001A JP 6900179 A JP6900179 A JP 6900179A JP S5741824 B2 JPS5741824 B2 JP S5741824B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54069001A
Other languages
Japanese (ja)
Other versions
JPS55162240A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6900179A priority Critical patent/JPS55162240A/en
Priority to GB7934894A priority patent/GB2038548B/en
Priority to CA337,192A priority patent/CA1130014A/en
Priority to NL7907715A priority patent/NL7907715A/en
Priority to DE2943435A priority patent/DE2943435C2/en
Priority to FR7926657A priority patent/FR2440080A1/en
Publication of JPS55162240A publication Critical patent/JPS55162240A/en
Priority to US06/329,759 priority patent/US4393577A/en
Publication of JPS5741824B2 publication Critical patent/JPS5741824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/7627—Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
JP6900179A 1978-10-27 1979-06-04 Semiconductor device and its manufacture Granted JPS55162240A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6900179A JPS55162240A (en) 1979-06-04 1979-06-04 Semiconductor device and its manufacture
GB7934894A GB2038548B (en) 1978-10-27 1979-10-08 Isolating semiconductor device by porous silicon oxide
CA337,192A CA1130014A (en) 1978-10-27 1979-10-09 Semiconductor devices and method of manufacturing the same
NL7907715A NL7907715A (en) 1978-10-27 1979-10-19 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THEM.
DE2943435A DE2943435C2 (en) 1978-10-27 1979-10-26 Semiconductor structure and process for its manufacture
FR7926657A FR2440080A1 (en) 1978-10-27 1979-10-26 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPRISING POROUS SILICON REGIONS MADE BY ANODINATION
US06/329,759 US4393577A (en) 1978-10-27 1981-12-11 Semiconductor devices and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6900179A JPS55162240A (en) 1979-06-04 1979-06-04 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS55162240A JPS55162240A (en) 1980-12-17
JPS5741824B2 true JPS5741824B2 (en) 1982-09-04

Family

ID=13389916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6900179A Granted JPS55162240A (en) 1978-10-27 1979-06-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS55162240A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02104966A (en) * 1988-10-12 1990-04-17 Nissan Motor Co Ltd Fuel supply system for internal combustion engine
JPH05102471A (en) * 1991-10-03 1993-04-23 Sharp Corp Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51278A (en) * 1974-06-18 1976-01-05 Matsushita Electric Ind Co Ltd HANDOTAISHUSEKIKAIROKITAINO SEIZOHOHO
JPS5559736A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS5559735A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51278A (en) * 1974-06-18 1976-01-05 Matsushita Electric Ind Co Ltd HANDOTAISHUSEKIKAIROKITAINO SEIZOHOHO
JPS5559736A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS5559735A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS55162240A (en) 1980-12-17

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