JPS5559735A - Substrate body for semiconductor integrated circuit and its preparation - Google Patents
Substrate body for semiconductor integrated circuit and its preparationInfo
- Publication number
- JPS5559735A JPS5559735A JP13225378A JP13225378A JPS5559735A JP S5559735 A JPS5559735 A JP S5559735A JP 13225378 A JP13225378 A JP 13225378A JP 13225378 A JP13225378 A JP 13225378A JP S5559735 A JPS5559735 A JP S5559735A
- Authority
- JP
- Japan
- Prior art keywords
- type
- silicon
- regions
- type semiconductor
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To easily obtain this substrate body for a semiconductor integrated circuit, by insulating a surface of a P-type semiconductor substrate except P-type semiconductor regions and one portion of the inside when mounting a plurality of the P- type semiconductor regions, which are mutually lnsulated, onto the P-type semiconductor substrate.
CONSTITUTION: Masks 71 are selectively formed on a main surface 62 of P-type monocrystal silicon 61, proton ions 73 are injected and proton injecting regions 75 are changed into N-type by thermally treating the silicon at 400W600°C in a nitrogen atmosphere. A P-type monocrystal region 76 is selectively turned into porosity by connecting the silicon 61 to a power source while using monocrystal silicon as an anode and platinum as a cathode in a hydrofluoric acid liquid. Porosity is converted into silicon oxide and the N-type regions into P-type regions by thermally treating the silicon substrate at the temperatures of 900W1100°C in an oxygen atmosphere. This structure is utilized for the preparation, etc. of an N channel MIS field-effect transistor.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13225378A JPS5559735A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
GB7934894A GB2038548B (en) | 1978-10-27 | 1979-10-08 | Isolating semiconductor device by porous silicon oxide |
CA337,192A CA1130014A (en) | 1978-10-27 | 1979-10-09 | Semiconductor devices and method of manufacturing the same |
NL7907715A NL7907715A (en) | 1978-10-27 | 1979-10-19 | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THEM. |
FR7926657A FR2440080A1 (en) | 1978-10-27 | 1979-10-26 | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPRISING POROUS SILICON REGIONS MADE BY ANODINATION |
DE2943435A DE2943435C2 (en) | 1978-10-27 | 1979-10-26 | Semiconductor structure and process for its manufacture |
US06/329,759 US4393577A (en) | 1978-10-27 | 1981-12-11 | Semiconductor devices and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13225378A JPS5559735A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5559735A true JPS5559735A (en) | 1980-05-06 |
JPS5617823B2 JPS5617823B2 (en) | 1981-04-24 |
Family
ID=15076942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13225378A Granted JPS5559735A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559735A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156335A (en) * | 1979-05-24 | 1980-12-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS55162240A (en) * | 1979-06-04 | 1980-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
-
1978
- 1978-10-27 JP JP13225378A patent/JPS5559735A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156335A (en) * | 1979-05-24 | 1980-12-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS5741823B2 (en) * | 1979-05-24 | 1982-09-04 | ||
JPS55162240A (en) * | 1979-06-04 | 1980-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS5741824B2 (en) * | 1979-06-04 | 1982-09-04 |
Also Published As
Publication number | Publication date |
---|---|
JPS5617823B2 (en) | 1981-04-24 |
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