JPS5559735A - Substrate body for semiconductor integrated circuit and its preparation - Google Patents

Substrate body for semiconductor integrated circuit and its preparation

Info

Publication number
JPS5559735A
JPS5559735A JP13225378A JP13225378A JPS5559735A JP S5559735 A JPS5559735 A JP S5559735A JP 13225378 A JP13225378 A JP 13225378A JP 13225378 A JP13225378 A JP 13225378A JP S5559735 A JPS5559735 A JP S5559735A
Authority
JP
Japan
Prior art keywords
type
silicon
regions
type semiconductor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13225378A
Other languages
Japanese (ja)
Other versions
JPS5617823B2 (en
Inventor
Kazuo Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13225378A priority Critical patent/JPS5559735A/en
Priority to GB7934894A priority patent/GB2038548B/en
Priority to CA337,192A priority patent/CA1130014A/en
Priority to NL7907715A priority patent/NL7907715A/en
Priority to FR7926657A priority patent/FR2440080A1/en
Priority to DE2943435A priority patent/DE2943435C2/en
Publication of JPS5559735A publication Critical patent/JPS5559735A/en
Publication of JPS5617823B2 publication Critical patent/JPS5617823B2/ja
Priority to US06/329,759 priority patent/US4393577A/en
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To easily obtain this substrate body for a semiconductor integrated circuit, by insulating a surface of a P-type semiconductor substrate except P-type semiconductor regions and one portion of the inside when mounting a plurality of the P- type semiconductor regions, which are mutually lnsulated, onto the P-type semiconductor substrate.
CONSTITUTION: Masks 71 are selectively formed on a main surface 62 of P-type monocrystal silicon 61, proton ions 73 are injected and proton injecting regions 75 are changed into N-type by thermally treating the silicon at 400W600°C in a nitrogen atmosphere. A P-type monocrystal region 76 is selectively turned into porosity by connecting the silicon 61 to a power source while using monocrystal silicon as an anode and platinum as a cathode in a hydrofluoric acid liquid. Porosity is converted into silicon oxide and the N-type regions into P-type regions by thermally treating the silicon substrate at the temperatures of 900W1100°C in an oxygen atmosphere. This structure is utilized for the preparation, etc. of an N channel MIS field-effect transistor.
COPYRIGHT: (C)1980,JPO&Japio
JP13225378A 1978-10-27 1978-10-27 Substrate body for semiconductor integrated circuit and its preparation Granted JPS5559735A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP13225378A JPS5559735A (en) 1978-10-27 1978-10-27 Substrate body for semiconductor integrated circuit and its preparation
GB7934894A GB2038548B (en) 1978-10-27 1979-10-08 Isolating semiconductor device by porous silicon oxide
CA337,192A CA1130014A (en) 1978-10-27 1979-10-09 Semiconductor devices and method of manufacturing the same
NL7907715A NL7907715A (en) 1978-10-27 1979-10-19 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THEM.
FR7926657A FR2440080A1 (en) 1978-10-27 1979-10-26 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPRISING POROUS SILICON REGIONS MADE BY ANODINATION
DE2943435A DE2943435C2 (en) 1978-10-27 1979-10-26 Semiconductor structure and process for its manufacture
US06/329,759 US4393577A (en) 1978-10-27 1981-12-11 Semiconductor devices and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13225378A JPS5559735A (en) 1978-10-27 1978-10-27 Substrate body for semiconductor integrated circuit and its preparation

Publications (2)

Publication Number Publication Date
JPS5559735A true JPS5559735A (en) 1980-05-06
JPS5617823B2 JPS5617823B2 (en) 1981-04-24

Family

ID=15076942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13225378A Granted JPS5559735A (en) 1978-10-27 1978-10-27 Substrate body for semiconductor integrated circuit and its preparation

Country Status (1)

Country Link
JP (1) JPS5559735A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS55162240A (en) * 1979-06-04 1980-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS5741823B2 (en) * 1979-05-24 1982-09-04
JPS55162240A (en) * 1979-06-04 1980-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS5741824B2 (en) * 1979-06-04 1982-09-04

Also Published As

Publication number Publication date
JPS5617823B2 (en) 1981-04-24

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