DE69033736T2 - Verfahren zum Herstellen einer Halbleitervorrichtung - Google Patents

Verfahren zum Herstellen einer Halbleitervorrichtung

Info

Publication number
DE69033736T2
DE69033736T2 DE69033736T DE69033736T DE69033736T2 DE 69033736 T2 DE69033736 T2 DE 69033736T2 DE 69033736 T DE69033736 T DE 69033736T DE 69033736 T DE69033736 T DE 69033736T DE 69033736 T2 DE69033736 T2 DE 69033736T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033736T
Other languages
English (en)
Other versions
DE69033736D1 (de
Inventor
Hideaki Oka
Satoshi Takenaka
Masafumi Kunii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3414089A external-priority patent/JPH02213123A/ja
Priority claimed from JP1074229A external-priority patent/JP2773203B2/ja
Priority claimed from JP7423089A external-priority patent/JPH02252246A/ja
Priority claimed from JP14247089A external-priority patent/JPH036865A/ja
Priority claimed from JP25939389A external-priority patent/JPH03120872A/ja
Priority claimed from JP30286289A external-priority patent/JPH03161977A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69033736D1 publication Critical patent/DE69033736D1/de
Publication of DE69033736T2 publication Critical patent/DE69033736T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
DE69033736T 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung Expired - Fee Related DE69033736T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3414089A JPH02213123A (ja) 1989-02-14 1989-02-14 半導体装置の製造方法
JP1074229A JP2773203B2 (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP7423089A JPH02252246A (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP14247089A JPH036865A (ja) 1989-06-05 1989-06-05 薄膜半導体装置及びその製造方法
JP25939389A JPH03120872A (ja) 1989-10-04 1989-10-04 半導体装置及びその製造方法
JP30286289A JPH03161977A (ja) 1989-11-21 1989-11-21 薄膜半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69033736D1 DE69033736D1 (de) 2001-06-28
DE69033736T2 true DE69033736T2 (de) 2001-10-25

Family

ID=27549717

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69033736T Expired - Fee Related DE69033736T2 (de) 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE69032773T Expired - Lifetime DE69032773T2 (de) 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung

Family Applications After (3)

Application Number Title Priority Date Filing Date
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE69032773T Expired - Lifetime DE69032773T2 (de) 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (3) US6235563B1 (de)
EP (4) EP0608503B1 (de)
DE (4) DE69033736T2 (de)
HK (1) HK1014293A1 (de)
SG (1) SG108807A1 (de)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5623243A (en) * 1990-03-20 1997-04-22 Nec Corporation Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain
SG63578A1 (en) * 1990-11-16 1999-03-30 Seiko Epson Corp Thin film semiconductor device process for fabricating the same and silicon film
JP3103385B2 (ja) * 1991-01-25 2000-10-30 株式会社東芝 ポリシリコン薄膜半導体装置
US5298455A (en) * 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
KR930703707A (ko) * 1991-01-30 1993-11-30 죤 죠셉 우르수 폴리실리콘 박막 트랜지스터
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Ind Co Ltd Manufacturing method of thin film transistor
US6544825B1 (en) * 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
SG64308A1 (en) 1993-07-26 1999-04-27 Seiko Epson Corp Thin-film semiconductor device method of fabricating thin-film semiconductor device and display system using the same
KR100333153B1 (ko) * 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JP3599290B2 (ja) 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
FR2728390A1 (fr) * 1994-12-19 1996-06-21 Korea Electronics Telecomm Procede de formation d'un transistor a film mince
TW303526B (de) * 1994-12-27 1997-04-21 Matsushita Electric Ind Co Ltd
US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JPH098313A (ja) * 1995-06-23 1997-01-10 Sharp Corp 半導体装置の製造方法および液晶表示装置の製造方法
US6929985B2 (en) * 1995-07-27 2005-08-16 Taisei Corporation Air filter, method of manufacturing air filter, local facility, clean room, treating agent, and method of manufacturing filter medium
US6027960A (en) * 1995-10-25 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
JP3424891B2 (ja) * 1996-12-27 2003-07-07 三洋電機株式会社 薄膜トランジスタの製造方法および表示装置
JP3830623B2 (ja) * 1997-07-14 2006-10-04 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
US7248232B1 (en) 1998-02-25 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Information processing device
JP3141940B2 (ja) * 1998-05-08 2001-03-07 日本電気株式会社 カラーリニアイメージセンサ
JP3483484B2 (ja) * 1998-12-28 2004-01-06 富士通ディスプレイテクノロジーズ株式会社 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法
US6514801B1 (en) * 1999-03-30 2003-02-04 Seiko Epson Corporation Method for manufacturing thin-film transistor
US20030148566A1 (en) * 2000-04-11 2003-08-07 Takashi Noguchi Production method for flat panel display
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
GB2406710B (en) * 2000-12-04 2005-06-22 Vortek Ind Ltd Heat-treating methods and systems
WO2002047123A1 (en) * 2000-12-04 2002-06-13 Vortek Industries Ltd. Heat-treating methods and systems
GB2370043A (en) * 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films
US6306697B1 (en) * 2001-01-05 2001-10-23 United Microelectronics Corp. Low temperature polysilicon manufacturing process
US7151017B2 (en) * 2001-01-26 2006-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100650417B1 (ko) * 2001-02-19 2006-11-28 인터내셔널 비지네스 머신즈 코포레이션 박막 트랜지스터 구조, 그 박막 트랜지스터 구조의 제조방법 및 그 박막 트랜지스터 구조를 사용한 디스플레이 장치
US6426246B1 (en) * 2001-02-21 2002-07-30 United Microelectronics Corp. Method for forming thin film transistor with lateral crystallization
US6933566B2 (en) * 2001-07-05 2005-08-23 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US6852575B2 (en) * 2001-07-05 2005-02-08 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US6638776B2 (en) * 2002-02-15 2003-10-28 Lsi Logic Corporation Thermal characterization compensation
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
DE10229055A1 (de) * 2002-06-28 2004-01-29 Siemens Ag IC auf Quarzsubstrat
KR20040016696A (ko) * 2002-08-19 2004-02-25 삼성전자주식회사 반도체장치의 전극형성방법 및 장치
US6689646B1 (en) * 2002-11-14 2004-02-10 Sharp Laboratories Of America, Inc. Plasma method for fabricating oxide thin films
KR101163682B1 (ko) 2002-12-20 2012-07-09 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 장치
US6890867B2 (en) * 2003-02-25 2005-05-10 Micron Technology, Inc. Transistor fabrication methods comprising selective wet-oxidation
JP4042685B2 (ja) * 2003-03-26 2008-02-06 セイコーエプソン株式会社 トランジスタの製造方法
US8357242B2 (en) 2007-05-03 2013-01-22 Jewett Russell F Crystalline film devices, apparatuses for and methods of fabrication
KR100712101B1 (ko) * 2004-06-30 2007-05-02 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
US7432141B2 (en) * 2004-09-08 2008-10-07 Sandisk 3D Llc Large-grain p-doped polysilicon films for use in thin film transistors
FR2880027B1 (fr) * 2004-12-23 2007-04-20 Innovative Systems & Technolog Procede de traitement d'un materiau polymere, dispositif pour la mise en oeuvre de ce procede et utilisation de ce dispositif au traitement de corps creux
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US8318554B2 (en) * 2005-04-28 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of forming gate insulating film for thin film transistors using plasma oxidation
US7785947B2 (en) * 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
US7608490B2 (en) * 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101293567B1 (ko) * 2006-02-21 2013-08-06 삼성디스플레이 주식회사 표시장치의 제조방법
US7687334B2 (en) * 2006-03-23 2010-03-30 Board Of Trustees Of The University Of Arkansas Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US8378348B2 (en) * 2008-01-25 2013-02-19 Sharp Kabushiki Kaisha Semiconductor element and method for manufacturing the same
CN101926007B (zh) * 2008-01-25 2013-04-17 夏普株式会社 半导体元件及其制造方法
TWI355085B (en) * 2008-03-14 2011-12-21 Chunghwa Picture Tubes Ltd Thin film transistor and fabricating method thereo
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
US20150263201A1 (en) * 2008-05-28 2015-09-17 Solar-Tectic Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
DE102008053955B4 (de) * 2008-10-31 2010-10-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit Verbesserung der Verspannungsübertragung durch eine späte Gaterekristallisierung und Transistor
KR101389058B1 (ko) * 2009-03-25 2014-04-28 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조방법
KR101079027B1 (ko) * 2009-07-07 2011-11-02 한국철강 주식회사 광기전력 장치의 제조 방법
KR20120127009A (ko) * 2011-05-13 2012-11-21 에스케이하이닉스 주식회사 반도체장치 제조 방법
KR101348991B1 (ko) 2012-01-27 2014-01-10 한국교통대학교산학협력단 비정질 실리콘 박막의 결정화 방법 및 이를 이용한 다결정 실리콘 태양전지의 제조방법
DE102013102074A1 (de) 2013-03-04 2014-09-04 Schmid Vacuum Technology Gmbh Anlage und Verfahren zur Beschichtung von Substraten mit polykristallinem Silizium
US9818606B2 (en) * 2013-05-31 2017-11-14 Applied Materials, Inc. Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture
US9287287B2 (en) * 2013-12-18 2016-03-15 Macronix International Co., Ltd. Semiconductor device including multi-layer structure
CN107851559B (zh) 2015-06-26 2022-04-26 东京毅力科创株式会社 气相蚀刻系统和方法
WO2016210299A1 (en) 2015-06-26 2016-12-29 Tokyo Electron Limited GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
KR101757816B1 (ko) * 2015-09-30 2017-07-14 세메스 주식회사 기판 처리 방법 및 장치
US10515800B2 (en) * 2018-01-23 2019-12-24 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate
KR20210019573A (ko) 2018-07-05 2021-02-22 램 리써치 코포레이션 기판 프로세싱 시스템에서 기판 지지부의 동적 온도 제어
CN112750682B (zh) * 2019-10-30 2022-12-30 夏泰鑫半导体(青岛)有限公司 存储器件的制造方法及沉积半导体材料于基板的方法
CN111653474A (zh) * 2020-05-19 2020-09-11 上海华虹宏力半导体制造有限公司 多晶硅薄膜成膜方法
CN113228282B (zh) * 2021-03-29 2023-12-05 长江存储科技有限责任公司 用于增大半导体器件中的多晶硅晶粒尺寸的阶梯式退火工艺
CN115172518A (zh) * 2022-07-08 2022-10-11 酒泉正泰新能源科技有限公司 一种太阳能电池的多次氧化扩散方法、制备方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
US4214918A (en) 1978-10-12 1980-07-29 Stanford University Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4249957A (en) * 1979-05-30 1981-02-10 Taher Daud Copper doped polycrystalline silicon solar cell
JPS56158431A (en) * 1980-05-13 1981-12-07 Meidensha Electric Mfg Co Ltd Forming of oxidized film of semiconductor element for electric power
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device
US4597804A (en) * 1981-03-11 1986-07-01 Fujitsu Limited Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
JPS5946105B2 (ja) * 1981-10-27 1984-11-10 日本電信電話株式会社 バイポ−ラ型トランジスタ装置及びその製法
JPS5879718A (ja) * 1981-11-07 1983-05-13 Toshiba Corp 半導体装置の製法
DE3241959A1 (de) * 1981-11-13 1983-05-26 Canon K.K., Tokyo Halbleiterbauelement
WO1983002314A1 (en) * 1981-12-31 1983-07-07 Chye, Patrick, W. Method for reducing oxygen precipitation in silicon wafers
JPS58130517A (ja) 1982-01-29 1983-08-04 Hitachi Ltd 単結晶薄膜の製造方法
GB2131407B (en) * 1982-11-12 1987-02-04 Rca Corp Method of formation of silicon dioxide layer
JPS59195871A (ja) * 1983-04-20 1984-11-07 Mitsubishi Electric Corp Ｍｏｓ電界効果トランジスタの製造方法
US4471523A (en) * 1983-05-02 1984-09-18 International Business Machines Corporation Self-aligned field implant for oxide-isolated CMOS FET
JPS59208743A (ja) * 1983-05-13 1984-11-27 Oki Electric Ind Co Ltd 半導体装置の製造方法
CA1239706A (en) 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
US4581814A (en) * 1984-12-13 1986-04-15 At&T Bell Laboratories Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4751196A (en) * 1985-04-01 1988-06-14 Motorola Inc. High voltage thin film transistor on PLZT and method of manufacture thereof
JP2505736B2 (ja) 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4597160A (en) 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JPS6310573A (ja) * 1986-07-02 1988-01-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6342112A (ja) 1986-08-07 1988-02-23 Sharp Corp 多結晶シリコン薄膜の形成方法
DE3780895T2 (de) * 1986-09-24 1993-03-11 Nec Corp Komplementaerer feldeffekt-transistor mit isoliertem gate.
DE3856086T2 (de) * 1987-06-22 1998-04-09 At & T Corp Halbleiterschaltung mit Wannenverbindung
US4851370A (en) * 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
JPH0281421A (ja) 1988-09-16 1990-03-22 Fuji Electric Co Ltd 多結晶シリコン膜の形成方法
US4995692A (en) * 1990-02-06 1991-02-26 General Motors Corporation Fiber optic star coupler

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EP0598409B1 (de) 1998-11-18
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EP0383230A3 (de) 1990-12-19
DE69032773D1 (de) 1998-12-24
US6403497B1 (en) 2002-06-11
EP0598410A1 (de) 1994-05-25
EP0383230B1 (de) 1997-05-28
EP0608503B1 (de) 1997-05-28
US20020132452A1 (en) 2002-09-19
EP0383230A2 (de) 1990-08-22
EP0598410B1 (de) 2001-05-23
EP0608503A2 (de) 1994-08-03
EP0608503A3 (de) 1995-05-24
US6235563B1 (en) 2001-05-22
SG108807A1 (en) 2005-02-28
DE69030822D1 (de) 1997-07-03
DE69033736D1 (de) 2001-06-28
DE69030775T2 (de) 1997-11-13
DE69030775D1 (de) 1997-07-03
EP0598409A1 (de) 1994-05-25
DE69030822T2 (de) 1997-11-27

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