DE68915510D1 - Verfahren zur Herstellung einer schnellen Diode und nach diesem Verfahren erhaltene schnelle Diode. - Google Patents

Verfahren zur Herstellung einer schnellen Diode und nach diesem Verfahren erhaltene schnelle Diode.

Info

Publication number
DE68915510D1
DE68915510D1 DE68915510T DE68915510T DE68915510D1 DE 68915510 D1 DE68915510 D1 DE 68915510D1 DE 68915510 T DE68915510 T DE 68915510T DE 68915510 T DE68915510 T DE 68915510T DE 68915510 D1 DE68915510 D1 DE 68915510D1
Authority
DE
Germany
Prior art keywords
fast diode
manufacturing
fast
diode manufacturing
diode obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915510T
Other languages
English (en)
Other versions
DE68915510T2 (de
Inventor
Jean-Pierre Follegot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE68915510D1 publication Critical patent/DE68915510D1/de
Publication of DE68915510T2 publication Critical patent/DE68915510T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE68915510T 1988-11-09 1989-11-06 Verfahren zur Herstellung einer schnellen Diode und nach diesem Verfahren erhaltene schnelle Diode. Expired - Fee Related DE68915510T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8815728A FR2638892B1 (fr) 1988-11-09 1988-11-09 Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede

Publications (2)

Publication Number Publication Date
DE68915510D1 true DE68915510D1 (de) 1994-06-30
DE68915510T2 DE68915510T2 (de) 1995-01-05

Family

ID=9372465

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915510T Expired - Fee Related DE68915510T2 (de) 1988-11-09 1989-11-06 Verfahren zur Herstellung einer schnellen Diode und nach diesem Verfahren erhaltene schnelle Diode.

Country Status (5)

Country Link
US (1) US5032540A (de)
EP (1) EP0368768B1 (de)
JP (1) JP2697199B2 (de)
DE (1) DE68915510T2 (de)
FR (1) FR2638892B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225706A (en) * 1987-12-04 1993-07-06 Thomson-Csf Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor
IT1244119B (it) * 1990-11-29 1994-07-05 Cons Ric Microelettronica Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
IT1245365B (it) * 1991-03-28 1994-09-20 Cons Ric Microelettronica Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione
US5352910A (en) * 1992-04-07 1994-10-04 Tokyo Denki Seizo Kabushiki Kaisha Semiconductor device with a buffer structure
JP3994443B2 (ja) * 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
WO1999009600A1 (en) * 1997-08-14 1999-02-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
EP1026754B1 (de) * 1998-06-01 2011-03-30 Mitsubishi Denki Kabushiki Kaisha Diode
JP4129106B2 (ja) 1999-10-27 2008-08-06 三菱電機株式会社 半導体装置
US6737731B1 (en) * 2000-06-26 2004-05-18 Fairchild Semiconductor Corporation Soft recovery power diode
DE10048345A1 (de) * 2000-09-29 2002-05-16 Eupec Gmbh & Co Kg Körper aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge
DE102005063332B4 (de) * 2005-05-24 2009-04-02 Infineon Technologies Ag Hochschwindigkeitsdiode und Verfahren zu ihrer Herstellung
JP2007184439A (ja) * 2006-01-10 2007-07-19 Shindengen Electric Mfg Co Ltd 半導体装置
CN101410977A (zh) * 2006-01-31 2009-04-15 Memc电子材料有限公司 具有高热导率的半导体晶片
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
RU2626075C1 (ru) * 2016-03-14 2017-07-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" (ФГБОУ ВО "Чеченский государственный университет") Способ изготовления полупроводникового прибора
CN115775836B (zh) * 2022-12-19 2023-09-05 扬州国宇电子有限公司 一种台面结构快恢复二极管及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140560A (en) * 1977-06-20 1979-02-20 International Rectifier Corporation Process for manufacture of fast recovery diodes
JPS5821342A (ja) * 1981-07-31 1983-02-08 Hitachi Ltd 半導体装置
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide
DE3328521C2 (de) * 1983-08-06 1985-11-14 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gleichrichterdiode für hohe Sperrspannung

Also Published As

Publication number Publication date
JPH02180015A (ja) 1990-07-12
EP0368768B1 (de) 1994-05-25
DE68915510T2 (de) 1995-01-05
EP0368768A1 (de) 1990-05-16
FR2638892B1 (fr) 1992-12-24
FR2638892A1 (fr) 1990-05-11
JP2697199B2 (ja) 1998-01-14
US5032540A (en) 1991-07-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee