IT1244119B - Processo di introduzione e diffusione di ioni di platino in una fetta di silicio - Google Patents

Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Info

Publication number
IT1244119B
IT1244119B IT02223790A IT2223790A IT1244119B IT 1244119 B IT1244119 B IT 1244119B IT 02223790 A IT02223790 A IT 02223790A IT 2223790 A IT2223790 A IT 2223790A IT 1244119 B IT1244119 B IT 1244119B
Authority
IT
Italy
Prior art keywords
slice
diffusion
introduction
silicon
platinum ions
Prior art date
Application number
IT02223790A
Other languages
English (en)
Other versions
IT9022237A0 (it
IT9022237A1 (it
Inventor
Ferruccio Frisina
Nella Tavolo
Mario Raspagliesi
Original Assignee
Cons Ric Microelettronica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cons Ric Microelettronica filed Critical Cons Ric Microelettronica
Priority to IT02223790A priority Critical patent/IT1244119B/it
Publication of IT9022237A0 publication Critical patent/IT9022237A0/it
Priority to DE69117889T priority patent/DE69117889T2/de
Priority to EP91202986A priority patent/EP0488440B1/en
Priority to US07/794,390 priority patent/US5227315A/en
Priority to JP30736791A priority patent/JP3213357B2/ja
Publication of IT9022237A1 publication Critical patent/IT9022237A1/it
Application granted granted Critical
Publication of IT1244119B publication Critical patent/IT1244119B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
IT02223790A 1990-11-29 1990-11-29 Processo di introduzione e diffusione di ioni di platino in una fetta di silicio IT1244119B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT02223790A IT1244119B (it) 1990-11-29 1990-11-29 Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
DE69117889T DE69117889T2 (de) 1990-11-29 1991-11-16 Verfahren zur Einführung und Diffundierung von Platin-Ionen in einem Siliziumplättchen
EP91202986A EP0488440B1 (en) 1990-11-29 1991-11-16 Process of introduction and diffusion of platinum ions in a slice of silicon
US07/794,390 US5227315A (en) 1990-11-29 1991-11-19 Process of introduction and diffusion of platinum ions in a slice of silicon
JP30736791A JP3213357B2 (ja) 1990-11-29 1991-11-22 シリコンスライス内に白金イオンを導入および拡散する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02223790A IT1244119B (it) 1990-11-29 1990-11-29 Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Publications (3)

Publication Number Publication Date
IT9022237A0 IT9022237A0 (it) 1990-11-29
IT9022237A1 IT9022237A1 (it) 1992-05-30
IT1244119B true IT1244119B (it) 1994-07-05

Family

ID=11193497

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02223790A IT1244119B (it) 1990-11-29 1990-11-29 Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Country Status (5)

Country Link
US (1) US5227315A (it)
EP (1) EP0488440B1 (it)
JP (1) JP3213357B2 (it)
DE (1) DE69117889T2 (it)
IT (1) IT1244119B (it)

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US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1542929B (zh) * 1993-03-12 2012-05-30 株式会社半导体能源研究所 半导体器件的制造方法
EP0675527B1 (en) * 1994-03-30 1999-11-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Manufacturing process for obtaining bipolar transistors with controlled storage time
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
US5747371A (en) * 1996-07-22 1998-05-05 Motorola, Inc. Method of manufacturing vertical MOSFET
EP0913872A1 (en) * 1997-10-29 1999-05-06 Motorola Semiconducteurs S.A. Insulated gate bipolar transistor
JP5061407B2 (ja) * 2001-01-31 2012-10-31 富士電機株式会社 半導体装置およびその製造方法
WO2003088280A1 (en) * 2002-04-08 2003-10-23 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8794501B2 (en) 2011-11-18 2014-08-05 LuxVue Technology Corporation Method of transferring a light emitting diode
US10449781B2 (en) 2013-10-09 2019-10-22 Dover Europe Sarl Apparatus and method for thermal transfer printing
US8922611B1 (en) 2013-10-09 2014-12-30 Markem-Imaje Corporation Apparatus and method for thermal transfer printing
JP6237902B2 (ja) * 2014-07-17 2017-11-29 富士電機株式会社 半導体装置および半導体装置の製造方法
US9209027B1 (en) * 2014-08-14 2015-12-08 Infineon Technologies Ag Adjusting the charge carrier lifetime in a bipolar semiconductor device
CN113223944B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113223953B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113178385B (zh) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 一种芯片的制造方法、制造设备和芯片

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2341311C3 (de) * 1973-08-16 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
US4137370A (en) * 1977-08-16 1979-01-30 The United States Of America As Represented By The Secretary Of The Air Force Titanium and titanium alloys ion plated with noble metals and their alloys
DE3131914A1 (de) * 1981-08-12 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Leistungs-mos-feldeffekttransistor und verfahren zu seiner herstellung
JPS5975662A (ja) * 1982-10-22 1984-04-28 Nec Corp サイリスタ
JPS6084881A (ja) * 1983-10-17 1985-05-14 Toshiba Corp 大電力ｍｏｓ　ｆｅｔとその製造方法
JPS6143474A (ja) * 1984-08-08 1986-03-03 Toshiba Corp 半導体装置
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPS6262557A (ja) * 1985-09-12 1987-03-19 Fuji Electric Co Ltd 半導体装置
US4717588A (en) * 1985-12-23 1988-01-05 Motorola Inc. Metal redistribution by rapid thermal processing
US4875082A (en) * 1986-06-20 1989-10-17 Ford Aerospace Corporation Schottky barrier photodiode structure
US4742017A (en) * 1986-06-20 1988-05-03 Ford Aerospace Corporation Implantation method for forming Schottky barrier photodiodes
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US4925812A (en) * 1989-09-21 1990-05-15 International Rectifier Corporation Platinum diffusion process

Also Published As

Publication number Publication date
IT9022237A0 (it) 1990-11-29
JP3213357B2 (ja) 2001-10-02
DE69117889D1 (de) 1996-04-18
EP0488440A3 (en) 1992-10-28
US5227315A (en) 1993-07-13
EP0488440A2 (en) 1992-06-03
JPH07111329A (ja) 1995-04-25
DE69117889T2 (de) 1996-09-05
IT9022237A1 (it) 1992-05-30
EP0488440B1 (en) 1996-03-13

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129