IT1246685B - Processo di diffusione del platino - Google Patents
Processo di diffusione del platinoInfo
- Publication number
- IT1246685B IT1246685B IT02149490A IT2149490A IT1246685B IT 1246685 B IT1246685 B IT 1246685B IT 02149490 A IT02149490 A IT 02149490A IT 2149490 A IT2149490 A IT 2149490A IT 1246685 B IT1246685 B IT 1246685B
- Authority
- IT
- Italy
- Prior art keywords
- diffusion process
- platinum diffusion
- platinum
- diffusion
- Prior art date
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title 2
- 238000009792 diffusion process Methods 0.000 title 1
- 229910052697 platinum Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Inert Electrodes (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/410,323 US4925812A (en) | 1989-09-21 | 1989-09-21 | Platinum diffusion process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9021494A0 IT9021494A0 (it) | 1990-09-17 |
| IT9021494A1 IT9021494A1 (it) | 1992-03-17 |
| IT1246685B true IT1246685B (it) | 1994-11-25 |
Family
ID=23624227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02149490A IT1246685B (it) | 1989-09-21 | 1990-09-17 | Processo di diffusione del platino |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4925812A (it) |
| JP (1) | JP2728147B2 (it) |
| AT (1) | AT398014B (it) |
| DE (1) | DE4029826A1 (it) |
| GB (1) | GB2236119B (it) |
| IT (1) | IT1246685B (it) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
| IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
| IT1244119B (it) * | 1990-11-29 | 1994-07-05 | Cons Ric Microelettronica | Processo di introduzione e diffusione di ioni di platino in una fetta di silicio |
| TW232751B (en) | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN1095204C (zh) * | 1993-03-12 | 2002-11-27 | 株式会社半导体能源研究所 | 半导体器件和晶体管 |
| JP3637069B2 (ja) | 1993-03-12 | 2005-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5635426A (en) * | 1993-08-26 | 1997-06-03 | Fujitsu Limited | Method of making a semiconductor device having a silicide local interconnect |
| EP0675527B1 (en) * | 1994-03-30 | 1999-11-10 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Manufacturing process for obtaining bipolar transistors with controlled storage time |
| US6426248B2 (en) * | 2000-02-15 | 2002-07-30 | International Rectifier Corporation | Process for forming power MOSFET device in float zone, non-epitaxial silicon |
| US6358825B1 (en) | 2000-11-21 | 2002-03-19 | Fairchild Semiconductor Corporation | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control |
| US20020195613A1 (en) * | 2001-04-02 | 2002-12-26 | International Rectifier Corp. | Low cost fast recovery diode and process of its manufacture |
| WO2003088280A1 (en) * | 2002-04-08 | 2003-10-23 | Council Of Scientific And Industrial Research | Process for the production of neodymium-iron-boron permanent magnet alloy powder |
| US7749877B2 (en) * | 2006-03-07 | 2010-07-06 | Siliconix Technology C. V. | Process for forming Schottky rectifier with PtNi silicide Schottky barrier |
| DE102007020039B4 (de) * | 2007-04-27 | 2011-07-14 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement |
| WO2016051973A1 (ja) | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN109671625A (zh) * | 2017-10-13 | 2019-04-23 | 华润微电子（重庆）有限公司 | 快恢复二极管的制备方法 |
| CN112002761A (zh) * | 2020-09-07 | 2020-11-27 | 深圳市美浦森半导体有限公司 | 一种集成frd的dmos器件的制造方法及dmos器件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728592A (en) * | 1969-05-09 | 1973-04-17 | Ibm | Semiconductor structure having reduced carrier lifetime |
| US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
| US3963523A (en) * | 1973-04-26 | 1976-06-15 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
| DE2735769C3 (de) * | 1977-08-09 | 1980-03-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Einstellung der Minoritätsladungsträgerlebensdauer in Halbleiterbauelementen aus einkristallinem Silizium |
| JPS54106178A (en) * | 1978-02-08 | 1979-08-20 | Mitsubishi Electric Corp | Thyristor and its manufacture |
| US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| JPS5939898B2 (ja) * | 1978-09-26 | 1984-09-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| US4322453A (en) * | 1980-12-08 | 1982-03-30 | International Business Machines Corporation | Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering |
| US4398344A (en) * | 1982-03-08 | 1983-08-16 | International Rectifier Corporation | Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface |
| JPS6084881A (ja) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | 大電力ｍｏｓ ｆｅｔとその製造方法 |
| JPS618916A (ja) * | 1984-06-21 | 1986-01-16 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | ド−プ領域の形成方法 |
| US4791074A (en) * | 1986-08-29 | 1988-12-13 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor apparatus |
| US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
-
1989
- 1989-09-21 US US07/410,323 patent/US4925812A/en not_active Expired - Fee Related
-
1990
- 1990-08-21 GB GB9018319A patent/GB2236119B/en not_active Expired - Fee Related
- 1990-09-17 IT IT02149490A patent/IT1246685B/it active IP Right Grant
- 1990-09-20 JP JP2254022A patent/JP2728147B2/ja not_active Expired - Lifetime
- 1990-09-20 DE DE4029826A patent/DE4029826A1/de active Granted
- 1990-09-21 AT AT0192490A patent/AT398014B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2236119A (en) | 1991-03-27 |
| DE4029826A1 (de) | 1991-04-04 |
| US4925812A (en) | 1990-05-15 |
| GB9018319D0 (en) | 1990-10-03 |
| ATA192490A (de) | 1993-12-15 |
| IT9021494A0 (it) | 1990-09-17 |
| AT398014B (de) | 1994-08-25 |
| DE4029826C2 (it) | 1993-09-09 |
| JPH03138926A (ja) | 1991-06-13 |
| IT9021494A1 (it) | 1992-03-17 |
| JP2728147B2 (ja) | 1998-03-18 |
| GB2236119B (en) | 1994-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |