DE68920657D1 - Verfahren zur Herstellung einer Halbleiter-auf-Isolator-Struktur mit Einfangplätzen. - Google Patents

Verfahren zur Herstellung einer Halbleiter-auf-Isolator-Struktur mit Einfangplätzen.

Info

Publication number
DE68920657D1
DE68920657D1 DE68920657T DE68920657T DE68920657D1 DE 68920657 D1 DE68920657 D1 DE 68920657D1 DE 68920657 T DE68920657 T DE 68920657T DE 68920657 T DE68920657 T DE 68920657T DE 68920657 D1 DE68920657 D1 DE 68920657D1
Authority
DE
Germany
Prior art keywords
semiconductor
manufacturing
insulator structure
capture locations
capture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920657T
Other languages
English (en)
Other versions
DE68920657T2 (de
Inventor
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68920657D1 publication Critical patent/DE68920657D1/de
Application granted granted Critical
Publication of DE68920657T2 publication Critical patent/DE68920657T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE68920657T 1988-07-28 1989-07-27 Verfahren zur Herstellung einer Halbleiter-auf-Isolator-Struktur mit Einfangplätzen. Expired - Fee Related DE68920657T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63186872A JPH0237771A (ja) 1988-07-28 1988-07-28 Ｓｏｉ基板

Publications (2)

Publication Number Publication Date
DE68920657D1 true DE68920657D1 (de) 1995-03-02
DE68920657T2 DE68920657T2 (de) 1995-06-22

Family

ID=16196151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920657T Expired - Fee Related DE68920657T2 (de) 1988-07-28 1989-07-27 Verfahren zur Herstellung einer Halbleiter-auf-Isolator-Struktur mit Einfangplätzen.

Country Status (5)

Country Link
US (1) US5063113A (de)
EP (1) EP0352801B1 (de)
JP (1) JPH0237771A (de)
KR (1) KR930004113B1 (de)
DE (1) DE68920657T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719839B2 (ja) * 1989-10-18 1995-03-06 株式会社東芝 半導体基板の製造方法
JP2735407B2 (ja) * 1990-08-30 1998-04-02 株式会社東芝 半導体装置およびその製造方法
US5366924A (en) * 1992-03-16 1994-11-22 At&T Bell Laboratories Method of manufacturing an integrated circuit including planarizing a wafer
JP2908150B2 (ja) * 1992-11-27 1999-06-21 日本電気株式会社 Ｓｏｉ基板構造及びその製造方法
US5512375A (en) * 1993-10-14 1996-04-30 Intevac, Inc. Pseudomorphic substrates
JPH0837286A (ja) * 1994-07-21 1996-02-06 Toshiba Microelectron Corp 半導体基板および半導体基板の製造方法
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
JP2998724B2 (ja) * 1997-11-10 2000-01-11 日本電気株式会社 張り合わせｓｏｉ基板の製造方法
US6255195B1 (en) * 1999-02-22 2001-07-03 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
JP4765157B2 (ja) 1999-11-17 2011-09-07 株式会社デンソー 半導体基板の製造方法
JP5051293B2 (ja) * 1999-11-17 2012-10-17 株式会社デンソー 半導体基板の製造方法
US7008854B2 (en) * 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7662701B2 (en) * 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7439158B2 (en) * 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
JP2006134925A (ja) * 2004-11-02 2006-05-25 Nec Electronics Corp Ｓｏｉ基板及びその製造方法
JP2006216934A (ja) * 2005-02-07 2006-08-17 Samsung Electronics Co Ltd エピタキシャル半導体基板の製造方法及び半導体装置の製造方法
KR100632463B1 (ko) 2005-02-07 2006-10-11 삼성전자주식회사 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서
JP5334354B2 (ja) * 2005-05-13 2013-11-06 シャープ株式会社 半導体装置の製造方法
EP2264753A3 (de) * 2006-06-27 2011-04-20 STMicroelectronics S.r.l. Integrierte Anordnung mit Isolation durch SOI und PN-Übergang und Herstellungsverfahren
JP2010258083A (ja) 2009-04-22 2010-11-11 Panasonic Corp Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
JP4685953B2 (ja) * 2009-07-17 2011-05-18 Ｄｏｗａエレクトロニクス株式会社 横方向を電流導通方向とする電子デバイス用エピタキシャル基板およびその製造方法
JP5882579B2 (ja) * 2010-12-14 2016-03-09 キヤノン株式会社 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226914A (en) * 1978-05-19 1980-10-07 Ford Motor Company Novel spraying composition, method of applying the same and article produced thereby
US4288495A (en) * 1978-05-19 1981-09-08 Ford Motor Company Article coated with beta silicon carbide and silicon
JPS5693367A (en) * 1979-12-20 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
JPS5717125A (en) * 1980-07-04 1982-01-28 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4499147A (en) * 1981-12-28 1985-02-12 Ibiden Co., Ltd. Silicon carbide substrates and a method of producing the same
US4608095A (en) * 1983-02-14 1986-08-26 Monsanto Company Gettering
US4608096A (en) * 1983-04-04 1986-08-26 Monsanto Company Gettering
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4666532A (en) * 1984-05-04 1987-05-19 Monsanto Company Denuding silicon substrates with oxygen and halogen
JPS6173345A (ja) * 1984-09-19 1986-04-15 Toshiba Corp 半導体装置
JPS6191098A (ja) * 1984-10-09 1986-05-09 Daido Steel Co Ltd シリコン基板上における砒素化ガリウム成長結晶体とその結晶成長方法
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
US4781766A (en) * 1985-10-30 1988-11-01 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell and method
JPS6329937A (ja) * 1986-07-23 1988-02-08 Sony Corp 半導体基板

Also Published As

Publication number Publication date
KR930004113B1 (ko) 1993-05-20
JPH0573349B2 (de) 1993-10-14
EP0352801B1 (de) 1995-01-18
EP0352801A2 (de) 1990-01-31
EP0352801A3 (en) 1990-09-12
DE68920657T2 (de) 1995-06-22
JPH0237771A (ja) 1990-02-07
US5063113A (en) 1991-11-05
KR910003762A (ko) 1991-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee