JPS55162273A - Schottky barrier diode - Google Patents

Schottky barrier diode

Info

Publication number
JPS55162273A
JPS55162273A JP6959779A JP6959779A JPS55162273A JP S55162273 A JPS55162273 A JP S55162273A JP 6959779 A JP6959779 A JP 6959779A JP 6959779 A JP6959779 A JP 6959779A JP S55162273 A JPS55162273 A JP S55162273A
Authority
JP
Japan
Prior art keywords
substrate
barrier metal
window
constitution
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6959779A
Other languages
Japanese (ja)
Inventor
Mamoru Koshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Original Assignee
Origin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd filed Critical Origin Electric Co Ltd
Priority to JP6959779A priority Critical patent/JPS55162273A/en
Publication of JPS55162273A publication Critical patent/JPS55162273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Abstract

PURPOSE:To obtain a Schottky barrier diode high-pressure resisting for use on large current by a method wherein a plural windows are formed along an electrode window provided in an insulating film on a semiconductor substrate, which is covered with a barrier metal. CONSTITUTION:An SiO2 film is formed on an n<->-epitaxial layer on an n<+>-Si substrate 1, and fine windows W1, W2 are provided at a minute interval along a window W0. The window wall surface is then formed perpendicularly to the substrate face through a selected etching condition. Next, a barrier metal 3 is made. According to this constitution, resistance is increasing on the metal 3 in accordance as it proceeds from the window W0 to W2, therefore a potential difference is produced. A stretch 4 of a depletion layer is slanting mildly at the peripheral edge, and an electric field is not concentrated consequently. Then, since the barrier metal 3 is formed on the wondows W1 and W2 and the epitaxial layer of the substrate, a larger current capacity is obtainable than a conventional type. Further, the barrier metal covers an overall surface of the substrate, therefore an apprehension of exfoliation due to heat scarcely exists and a reliability is thus improved.
JP6959779A 1979-06-04 1979-06-04 Schottky barrier diode Pending JPS55162273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6959779A JPS55162273A (en) 1979-06-04 1979-06-04 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6959779A JPS55162273A (en) 1979-06-04 1979-06-04 Schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS55162273A true JPS55162273A (en) 1980-12-17

Family

ID=13407394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6959779A Pending JPS55162273A (en) 1979-06-04 1979-06-04 Schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS55162273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204572A (en) * 1986-03-05 1987-09-09 Sanken Electric Co Ltd Schottky barrier semiconductor device
EP0435105A1 (en) * 1989-12-15 1991-07-03 Kabushiki Kaisha Toshiba Method of manufacturing a Schottky diode device
JP2006287264A (en) * 2006-07-24 2006-10-19 Nissan Motor Co Ltd Silicon-carbide semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204572A (en) * 1986-03-05 1987-09-09 Sanken Electric Co Ltd Schottky barrier semiconductor device
EP0435105A1 (en) * 1989-12-15 1991-07-03 Kabushiki Kaisha Toshiba Method of manufacturing a Schottky diode device
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
JP2006287264A (en) * 2006-07-24 2006-10-19 Nissan Motor Co Ltd Silicon-carbide semiconductor device
JP4586775B2 (en) * 2006-07-24 2010-11-24 日産自動車株式会社 Silicon carbide semiconductor device

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