KR840001783A - 광반도체 장치 - Google Patents

광반도체 장치 Download PDF

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Publication number
KR840001783A
KR840001783A KR1019820004346A KR820004346A KR840001783A KR 840001783 A KR840001783 A KR 840001783A KR 1019820004346 A KR1019820004346 A KR 1019820004346A KR 820004346 A KR820004346 A KR 820004346A KR 840001783 A KR840001783 A KR 840001783A
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KR
South Korea
Prior art keywords
semiconductor layer
semiconductor
optical detection
semiconductor device
conductivity type
Prior art date
Application number
KR1019820004346A
Other languages
English (en)
Other versions
KR900000074B1 (ko
Inventor
히로뷰미 오오우찌 (외 5)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56156282A external-priority patent/JPS5857760A/ja
Priority claimed from JP56156283A external-priority patent/JPS5857761A/ja
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840001783A publication Critical patent/KR840001783A/ko
Application granted granted Critical
Publication of KR900000074B1 publication Critical patent/KR900000074B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

내용 없음

Description

광반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도와 제4도는 본 발명에 따르는 하나의 실시예의 소자구조를 나타내는 단면도.

Claims (6)

  1. 제1의 도전형을 나타내는 제1의 반도체층과, 이 제1의 반도체층 위에 상기 반도체층보다 금지대폭이 크고 제1도전형을 나타내는 제2의 반도체층과, 이 제2의 반도체층 내에 부설한 제2 도전형을 나타내는 영역에 의하여 형성되는 Pn접합과를 최소한 갖고 있는 광검출 반도체 소자로서 상기 제2의 반도체층 위에다 제1의 도전형을 나타내고 또 표면보호 기능이 있는 제3의 반도체층을 갖는 것을 특징으로 하는 광 검출용의 반도체 소자.
  2. 상기 제3의 반도체층은 4원소계의 Ⅲ-Ⅴ족 화합물 반도체 재료로 만들어진 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
  3. 상기 제1의 반도체층이 In Ca As P로 되고, 상기 제2의 반도체층이 InP로 되며, 상기 제3의 반도체층이 In Ga As P와 In Ga As의 구룹(group)에서 선정된 최소한 어느 하나인 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
  4. 상기 제1의 반도체층이 Ga Sb로 되고, 상기 제2의 반도체층이 Ga A As Sb로 되며, 상기 제3의 반도체층이 Ga Al As Sb로 된 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
  5. 상기 제3의 반도체층 위에 또 하나의 절연막을 갖는 것을 특징으로 하는 특허청구의 범위 1, 2, 3 혹은 4의 광 검출용 반도체 소자.
  6. 상기 제2의 반도체층에 형성된 Pn접합과 상기 제1의 반도체층과의 거리가, 그 Pn접합으로부터 그 제1의 반도체층내에 뻗어나가는 전계강도가 그 제1의 반도체층의 최대전계(Ems)를 초과하지 않는 것을 특징으로 하는 특허청구의 범위 1, 2, 3 혹은 4의 광 검출용 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8204346A 1981-10-02 1982-09-27 광 검출용 반도체장치 KR900000074B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP56-156282 1981-10-02
JP56-156283 1981-10-02
JP56156282A JPS5857760A (ja) 1981-10-02 1981-10-02 光半導体装置
JP56156283A JPS5857761A (ja) 1981-10-02 1981-10-02 光半導体装置
JP56-156282-3 1981-10-02

Publications (2)

Publication Number Publication Date
KR840001783A true KR840001783A (ko) 1984-05-16
KR900000074B1 KR900000074B1 (ko) 1990-01-19

Family

ID=26484086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8204346A KR900000074B1 (ko) 1981-10-02 1982-09-27 광 검출용 반도체장치

Country Status (4)

Country Link
US (1) US4740819A (ko)
EP (1) EP0076495B1 (ko)
KR (1) KR900000074B1 (ko)
DE (1) DE3277353D1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224252A (ja) * 1987-02-06 1988-09-19 シーメンス、アクチエンゲゼルシヤフト 導波路−ホトダイオードアレー
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
JPH01183174A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd 半導体受光素子
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
JP4168307B2 (ja) * 2000-03-17 2008-10-22 ソニー株式会社 情報再生装置および画像表示制御方法、並びに記録媒体
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
US7049640B2 (en) * 2004-06-30 2006-05-23 The Boeing Company Low capacitance avalanche photodiode
IL174844A (en) * 2006-04-06 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
WO2013040184A1 (en) 2011-09-13 2013-03-21 L-3 Communications Cincinnati Electronics Corporation Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same
CN111312848A (zh) * 2020-02-26 2020-06-19 光丰科技(浙江)有限公司 光电探测器、集成光电探测器及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
US4287485A (en) * 1977-07-18 1981-09-01 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
US4231050A (en) * 1979-01-30 1980-10-28 Bell Telephone Laboratories, Incorporated Reduction of surface recombination current in GaAs devices
US4328508A (en) * 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
US4383266A (en) * 1979-09-26 1983-05-10 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode
JPS5763867A (en) * 1980-10-04 1982-04-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor avalanche diode
US4383267A (en) * 1980-10-17 1983-05-10 Rca Corporation Avalanche photodiode and method of making same
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element

Also Published As

Publication number Publication date
EP0076495A2 (en) 1983-04-13
DE3277353D1 (en) 1987-10-22
US4740819A (en) 1988-04-26
KR900000074B1 (ko) 1990-01-19
EP0076495B1 (en) 1987-09-16
EP0076495A3 (en) 1984-12-05

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