KR840001783A - 광반도체 장치 - Google Patents
광반도체 장치 Download PDFInfo
- Publication number
- KR840001783A KR840001783A KR1019820004346A KR820004346A KR840001783A KR 840001783 A KR840001783 A KR 840001783A KR 1019820004346 A KR1019820004346 A KR 1019820004346A KR 820004346 A KR820004346 A KR 820004346A KR 840001783 A KR840001783 A KR 840001783A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor layer
- semiconductor
- optical detection
- semiconductor device
- conductivity type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 28
- 230000003287 optical effect Effects 0.000 title claims 6
- 238000001514 detection method Methods 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도와 제4도는 본 발명에 따르는 하나의 실시예의 소자구조를 나타내는 단면도.
Claims (6)
- 제1의 도전형을 나타내는 제1의 반도체층과, 이 제1의 반도체층 위에 상기 반도체층보다 금지대폭이 크고 제1도전형을 나타내는 제2의 반도체층과, 이 제2의 반도체층 내에 부설한 제2 도전형을 나타내는 영역에 의하여 형성되는 Pn접합과를 최소한 갖고 있는 광검출 반도체 소자로서 상기 제2의 반도체층 위에다 제1의 도전형을 나타내고 또 표면보호 기능이 있는 제3의 반도체층을 갖는 것을 특징으로 하는 광 검출용의 반도체 소자.
- 상기 제3의 반도체층은 4원소계의 Ⅲ-Ⅴ족 화합물 반도체 재료로 만들어진 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
- 상기 제1의 반도체층이 In Ca As P로 되고, 상기 제2의 반도체층이 InP로 되며, 상기 제3의 반도체층이 In Ga As P와 In Ga As의 구룹(group)에서 선정된 최소한 어느 하나인 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
- 상기 제1의 반도체층이 Ga Sb로 되고, 상기 제2의 반도체층이 Ga A As Sb로 되며, 상기 제3의 반도체층이 Ga Al As Sb로 된 것을 특징으로 하는 특허청구의 범위 1의 광 검출용 반도체 소자.
- 상기 제3의 반도체층 위에 또 하나의 절연막을 갖는 것을 특징으로 하는 특허청구의 범위 1, 2, 3 혹은 4의 광 검출용 반도체 소자.
- 상기 제2의 반도체층에 형성된 Pn접합과 상기 제1의 반도체층과의 거리가, 그 Pn접합으로부터 그 제1의 반도체층내에 뻗어나가는 전계강도가 그 제1의 반도체층의 최대전계(Ems)를 초과하지 않는 것을 특징으로 하는 특허청구의 범위 1, 2, 3 혹은 4의 광 검출용 반도체 소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56-156282 | 1981-10-02 | ||
JP56-156283 | 1981-10-02 | ||
JP56156282A JPS5857760A (ja) | 1981-10-02 | 1981-10-02 | 光半導体装置 |
JP56156283A JPS5857761A (ja) | 1981-10-02 | 1981-10-02 | 光半導体装置 |
JP56-156282-3 | 1981-10-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840001783A true KR840001783A (ko) | 1984-05-16 |
KR900000074B1 KR900000074B1 (ko) | 1990-01-19 |
Family
ID=26484086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8204346A KR900000074B1 (ko) | 1981-10-02 | 1982-09-27 | 광 검출용 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4740819A (ko) |
EP (1) | EP0076495B1 (ko) |
KR (1) | KR900000074B1 (ko) |
DE (1) | DE3277353D1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224252A (ja) * | 1987-02-06 | 1988-09-19 | シーメンス、アクチエンゲゼルシヤフト | 導波路−ホトダイオードアレー |
US5053837A (en) * | 1987-09-16 | 1991-10-01 | Sumitomo Electric Industries, Ltd. | Ingaas/inp type pin photodiodes |
JPH01183174A (ja) * | 1988-01-18 | 1989-07-20 | Fujitsu Ltd | 半導体受光素子 |
JPH0327577A (ja) * | 1989-06-23 | 1991-02-05 | イーストマン・コダックジャパン株式会社 | 発光ダイオ―ドアレイ |
US5583352A (en) * | 1994-04-29 | 1996-12-10 | Eg&G Limited | Low-noise, reach-through, avalanche photodiodes |
JP4168307B2 (ja) * | 2000-03-17 | 2008-10-22 | ソニー株式会社 | 情報再生装置および画像表示制御方法、並びに記録媒体 |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
IL156744A (en) * | 2003-07-02 | 2011-02-28 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Depletion-less photodiode with suppressed dark current |
US7049640B2 (en) * | 2004-06-30 | 2006-05-23 | The Boeing Company | Low capacitance avalanche photodiode |
IL174844A (en) * | 2006-04-06 | 2011-02-28 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Unipolar semiconductor photodetector with suppressed dark current and method for producing the same |
WO2013040184A1 (en) | 2011-09-13 | 2013-03-21 | L-3 Communications Cincinnati Electronics Corporation | Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same |
CN111312848A (zh) * | 2020-02-26 | 2020-06-19 | 光丰科技(浙江)有限公司 | 光电探测器、集成光电探测器及其制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993506A (en) * | 1975-09-25 | 1976-11-23 | Varian Associates | Photovoltaic cell employing lattice matched quaternary passivating layer |
FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
US4287485A (en) * | 1977-07-18 | 1981-09-01 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
US4263605A (en) * | 1979-01-04 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices |
US4231050A (en) * | 1979-01-30 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Reduction of surface recombination current in GaAs devices |
US4328508A (en) * | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
US4258375A (en) * | 1979-04-09 | 1981-03-24 | Massachusetts Institute Of Technology | Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication |
US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
US4383266A (en) * | 1979-09-26 | 1983-05-10 | Kokusai Denshin Denwa Kabushiki Kaisha | Avalanche photo diode |
JPS5763867A (en) * | 1980-10-04 | 1982-04-17 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor avalanche diode |
US4383267A (en) * | 1980-10-17 | 1983-05-10 | Rca Corporation | Avalanche photodiode and method of making same |
JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
-
1982
- 1982-09-27 KR KR8204346A patent/KR900000074B1/ko active
- 1982-10-01 DE DE8282109103T patent/DE3277353D1/de not_active Expired
- 1982-10-01 EP EP82109103A patent/EP0076495B1/en not_active Expired
-
1986
- 1986-06-30 US US06/880,118 patent/US4740819A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0076495A2 (en) | 1983-04-13 |
DE3277353D1 (en) | 1987-10-22 |
US4740819A (en) | 1988-04-26 |
KR900000074B1 (ko) | 1990-01-19 |
EP0076495B1 (en) | 1987-09-16 |
EP0076495A3 (en) | 1984-12-05 |
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