SE8007199L - Zener-diod - Google Patents

Zener-diod

Info

Publication number
SE8007199L
SE8007199L SE8007199A SE8007199A SE8007199L SE 8007199 L SE8007199 L SE 8007199L SE 8007199 A SE8007199 A SE 8007199A SE 8007199 A SE8007199 A SE 8007199A SE 8007199 L SE8007199 L SE 8007199L
Authority
SE
Sweden
Prior art keywords
region
conductivity type
zener diode
situated
epitaxial layer
Prior art date
Application number
SE8007199A
Other languages
Unknown language ( )
English (en)
Inventor
A Schmitz
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE8007199L publication Critical patent/SE8007199L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
SE8007199A 1979-10-18 1980-10-15 Zener-diod SE8007199L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7907680A NL7907680A (nl) 1979-10-18 1979-10-18 Zenerdiode.

Publications (1)

Publication Number Publication Date
SE8007199L true SE8007199L (sv) 1981-04-19

Family

ID=19834032

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8007199A SE8007199L (sv) 1979-10-18 1980-10-15 Zener-diod

Country Status (9)

Country Link
US (1) US4419681A (sv)
JP (1) JPS5662374A (sv)
CA (1) CA1155968A (sv)
DE (1) DE3038571C2 (sv)
FR (1) FR2468208A1 (sv)
GB (1) GB2061003B (sv)
IT (1) IT1194705B (sv)
NL (1) NL7907680A (sv)
SE (1) SE8007199L (sv)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
US4589002A (en) * 1984-07-18 1986-05-13 Rca Corporation Diode structure
JP2527160B2 (ja) * 1985-11-22 1996-08-21 三菱電機株式会社 電界効果型半導体装置
CH673352A5 (sv) * 1987-03-30 1990-02-28 Bbc Brown Boveri & Cie
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
DE4130247A1 (de) * 1991-09-12 1993-03-18 Bosch Gmbh Robert Halbleiteranordnung und verfahren zu deren herstellung
EP0547675B1 (en) * 1991-12-16 1998-12-30 Koninklijke Philips Electronics N.V. Zener diode with reference diode and protective diode
JP4016595B2 (ja) * 2000-12-12 2007-12-05 サンケン電気株式会社 半導体装置及びその製造方法
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
CN104362182B (zh) * 2014-11-19 2017-04-05 桑德斯微电子器件（南京）有限公司 一种平面双结型稳压二极管芯片及其生产工艺
CN109863581B (zh) * 2016-10-18 2022-04-26 株式会社电装 半导体装置及其制造方法
JP6642507B2 (ja) 2016-10-18 2020-02-05 株式会社デンソー 半導体装置およびその製造方法
US10910501B2 (en) * 2018-09-05 2021-02-02 Monolith Semiconductor, Inc. Stucture and method for SIC based protection device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
DE2207654B2 (de) * 1972-02-18 1974-02-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen einer Zenerdiode
JPS5016483A (sv) * 1973-04-27 1975-02-21
JPS5068079A (sv) * 1973-10-17 1975-06-07
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
IN144488B (sv) * 1974-02-11 1978-05-06 Rca Corp
US4106043A (en) * 1975-07-31 1978-08-08 National Research Development Corporation Zener diodes
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.

Also Published As

Publication number Publication date
GB2061003B (en) 1983-08-10
GB2061003A (en) 1981-05-07
IT1194705B (it) 1988-09-22
CA1155968A (en) 1983-10-25
US4419681A (en) 1983-12-06
JPS5662374A (en) 1981-05-28
IT8025365A0 (it) 1980-10-15
NL7907680A (nl) 1981-04-22
FR2468208A1 (fr) 1981-04-30
DE3038571A1 (de) 1981-04-30
DE3038571C2 (de) 1985-11-21
FR2468208B1 (sv) 1983-12-30

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