JPS56158474A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56158474A JPS56158474A JP6245180A JP6245180A JPS56158474A JP S56158474 A JPS56158474 A JP S56158474A JP 6245180 A JP6245180 A JP 6245180A JP 6245180 A JP6245180 A JP 6245180A JP S56158474 A JPS56158474 A JP S56158474A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- type
- transistor
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To easily expand the depletion layer and to obtain a high withstand voltage for the planar type transistor used on subject semiconductor device by a method wherein the annular groove, protected by an insulating layer from the surface of a substrate, is provided in the collector region located around the connected section of a base collector. CONSTITUTION:The NPN (PNP) transistor of a planar type is formed by providing a P(N) type base layer 2 and an N(P) type emitter layer 3 on an N(or P) type substrate 1. Within the expanding range of the depletion layer 8 located outside the connected surface of the base collector, the annular groove 4 surrounding the junction part is provided and a construction is formed in such manner that the insulating layer 5 is protected by having it buried in the groove 4. Through these procedures, the depletion layer 8 of the collector can be spread out over the groove section 4, and said spreading section of the layer 8 is not terminated on the surface adjacent to the connected surface, the breakdown voltage close to the bulk can be obtained and the transistor of high withstand voltage can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6245180A JPS56158474A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6245180A JPS56158474A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158474A true JPS56158474A (en) | 1981-12-07 |
Family
ID=13200574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6245180A Pending JPS56158474A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158474A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6831338B1 (en) | 1998-10-19 | 2004-12-14 | Stmicroelectronics S.A. | Power component bearing interconnections |
-
1980
- 1980-05-12 JP JP6245180A patent/JPS56158474A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6831338B1 (en) | 1998-10-19 | 2004-12-14 | Stmicroelectronics S.A. | Power component bearing interconnections |
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