JPS5649560A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS5649560A
JPS5649560A JP12413079A JP12413079A JPS5649560A JP S5649560 A JPS5649560 A JP S5649560A JP 12413079 A JP12413079 A JP 12413079A JP 12413079 A JP12413079 A JP 12413079A JP S5649560 A JPS5649560 A JP S5649560A
Authority
JP
Japan
Prior art keywords
layer
layers
saturated
constitution
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12413079A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12413079A priority Critical patent/JPS5649560A/en
Publication of JPS5649560A publication Critical patent/JPS5649560A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the generation of SCR and the damage of device by preparing the maximum potential region between the I<2>L element and the saturated element on one semiconductor substrate. CONSTITUTION:An n<-> epitaxial layer is prepared through an n<+> buried layer on a p-substrate 1, on one island region separated by a p layer 4 an I2L device is formed, while on another island region a saturated element is formed. On an n<-> detached layer 12 between two p layers 4 an n<+> connecting layer 13 is prepared to make it into the maximum potential region connected with a power source Vcc and the p layers 4 are earthed. By such a constitution, although a parasitic pnp transistor is brought about between the saturated element p base and the p layers 4, this completely prevents the SCR formation. Consequently the coexistence of the IC device having the I<2>L element together with the saturated element does not cause the device destruction.
JP12413079A 1979-09-28 1979-09-28 Semiconductor ic device Pending JPS5649560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12413079A JPS5649560A (en) 1979-09-28 1979-09-28 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12413079A JPS5649560A (en) 1979-09-28 1979-09-28 Semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS5649560A true JPS5649560A (en) 1981-05-06

Family

ID=14877655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12413079A Pending JPS5649560A (en) 1979-09-28 1979-09-28 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS5649560A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280647A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Semiconductor device
US5942783A (en) * 1995-01-31 1999-08-24 Stmicroelectronics, S.R.L. Semiconductor device having improved latch-up protection
JP2016004883A (en) * 2014-06-16 2016-01-12 富士電機株式会社 Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123589A (en) * 1973-03-30 1974-11-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123589A (en) * 1973-03-30 1974-11-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280647A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Semiconductor device
US5942783A (en) * 1995-01-31 1999-08-24 Stmicroelectronics, S.R.L. Semiconductor device having improved latch-up protection
JP2016004883A (en) * 2014-06-16 2016-01-12 富士電機株式会社 Semiconductor integrated circuit device

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