GB1528028A - Integrated injection logic semiconductor device - Google Patents

Integrated injection logic semiconductor device

Info

Publication number
GB1528028A
GB1528028A GB5301375A GB5301375A GB1528028A GB 1528028 A GB1528028 A GB 1528028A GB 5301375 A GB5301375 A GB 5301375A GB 5301375 A GB5301375 A GB 5301375A GB 1528028 A GB1528028 A GB 1528028A
Authority
GB
United Kingdom
Prior art keywords
zone
substrate
zones
wall
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5301375A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1528028A publication Critical patent/GB1528028A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1528028 I<SP>2</SP>L semi-conductor device TOKYO SHIBAURA ELECTRIC CO Ltd 29 Dec 1975 [27 Dec 1974] 53013/75 Heading H1K An I<SP>2</SP>L semi-conductor device comprises a substrate, e.g. 11 (Fig. 1) of P(N) type carrying a more lightly doped layer 12 of the opposite type in which are formed two mutually spaced zones 13, 14 of P(N) type, one of which zones 13 is ohmically connected to the substrate and has formed in it a zone 15 of N(P) type, the construction being such the zones 15, 13 and layer 12 constitute the emitter, base and collector of a lateral injector transistor and substrate 11, layer 12 and zone 14 those of a complementary inverse transistor. Ohmic connection between zone 13 and the substrate may be effected as illustrated by additional N zone 17, or by zone 13 itself reaching down to the substrate. The device may be isolated from similar devices by a surrounding groove extending down to the substrate and filled with air or solid insulation or by an N(P) isolating wall in the same location, the wall optionally including a P(N) zone which together with it and the isolated part of layer 12 forms an additional lateral injector transistor. In one embodiment where a rectangular grid of such walls surrounds and mutually isolates a plurality of devices the zones 13, 15 may not even be necessary. In another embodiment, in which isolation of the device is provided by a groove on three sides and a P(N) wall on the fourth, connection of zone 13 to the substrate is made via this wall and a surface diffusion between it and the zone. The devices, which may be formed by conventional techniques, include zone 16 through which the input contact is connected to the base of the vertical transistor which may optionally have a plurality of collector zones.
GB5301375A 1974-12-27 1975-12-29 Integrated injection logic semiconductor device Expired GB1528028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49148565A JPS5182578A (en) 1974-12-27 1974-12-27

Publications (1)

Publication Number Publication Date
GB1528028A true GB1528028A (en) 1978-10-11

Family

ID=15455579

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5301375A Expired GB1528028A (en) 1974-12-27 1975-12-29 Integrated injection logic semiconductor device

Country Status (5)

Country Link
JP (1) JPS5182578A (en)
DE (2) DE2558975C2 (en)
FR (1) FR2296269A1 (en)
GB (1) GB1528028A (en)
NL (1) NL182763C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338131A1 (en) * 1983-10-20 1985-05-15 Telefunken electronic GmbH, 7100 Heilbronn I (UP ARROW) 2 (UP ARROW) L SWITCH

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368087A (en) * 1976-11-29 1978-06-17 Fujitsu Ltd Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1507299A (en) * 1974-03-26 1978-04-12 Signetics Corp Integrated semiconductor devices
JPS5513583B2 (en) * 1974-11-14 1980-04-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338131A1 (en) * 1983-10-20 1985-05-15 Telefunken electronic GmbH, 7100 Heilbronn I (UP ARROW) 2 (UP ARROW) L SWITCH

Also Published As

Publication number Publication date
FR2296269B1 (en) 1979-10-05
DE2560577C2 (en) 1986-04-17
DE2558975A1 (en) 1976-07-08
NL7515036A (en) 1976-06-29
FR2296269A1 (en) 1976-07-23
JPS5182578A (en) 1976-07-20
NL182763C (en) 1988-05-02
DE2558975C2 (en) 1985-11-07
NL182763B (en) 1987-12-01

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee