JPS5662374A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5662374A
JPS5662374A JP14310580A JP14310580A JPS5662374A JP S5662374 A JPS5662374 A JP S5662374A JP 14310580 A JP14310580 A JP 14310580A JP 14310580 A JP14310580 A JP 14310580A JP S5662374 A JPS5662374 A JP S5662374A
Authority
JP
Japan
Prior art keywords
zener diode
zener
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14310580A
Other languages
English (en)
Inventor
Shiyumitsutsu Aruberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5662374A publication Critical patent/JPS5662374A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP14310580A 1979-10-18 1980-10-15 Zener diode Pending JPS5662374A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7907680A NL7907680A (nl) 1979-10-18 1979-10-18 Zenerdiode.

Publications (1)

Publication Number Publication Date
JPS5662374A true JPS5662374A (en) 1981-05-28

Family

ID=19834032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14310580A Pending JPS5662374A (en) 1979-10-18 1980-10-15 Zener diode

Country Status (9)

Country Link
US (1) US4419681A (ja)
JP (1) JPS5662374A (ja)
CA (1) CA1155968A (ja)
DE (1) DE3038571C2 (ja)
FR (1) FR2468208A1 (ja)
GB (1) GB2061003B (ja)
IT (1) IT1194705B (ja)
NL (1) NL7907680A (ja)
SE (1) SE8007199L (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123771A (ja) * 1985-11-22 1987-06-05 Mitsubishi Electric Corp 電界効果型半導体装置
WO2018074228A1 (ja) * 2016-10-18 2018-04-26 株式会社デンソー 半導体装置およびその製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
US4589002A (en) * 1984-07-18 1986-05-13 Rca Corporation Diode structure
CH673352A5 (ja) * 1987-03-30 1990-02-28 Bbc Brown Boveri & Cie
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
DE4130247A1 (de) * 1991-09-12 1993-03-18 Bosch Gmbh Robert Halbleiteranordnung und verfahren zu deren herstellung
DE69228046T2 (de) * 1991-12-16 1999-07-01 Koninklijke Philips Electronics N.V., Eindhoven Zener-Diode mit Bezugs- und Schutzdiode
JP4016595B2 (ja) * 2000-12-12 2007-12-05 サンケン電気株式会社 半導体装置及びその製造方法
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
CN104362182B (zh) * 2014-11-19 2017-04-05 桑德斯微电子器件（南京）有限公司 一种平面双结型稳压二极管芯片及其生产工艺
JP6642507B2 (ja) 2016-10-18 2020-02-05 株式会社デンソー 半導体装置およびその製造方法
US10910501B2 (en) * 2018-09-05 2021-02-02 Monolith Semiconductor, Inc. Stucture and method for SIC based protection device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068079A (ja) * 1973-10-17 1975-06-07
JPS50116186A (ja) * 1974-02-11 1975-09-11

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
DE2207654B2 (de) * 1972-02-18 1974-02-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen einer Zenerdiode
JPS5016483A (ja) * 1973-04-27 1975-02-21
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4106043A (en) * 1975-07-31 1978-08-08 National Research Development Corporation Zener diodes
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068079A (ja) * 1973-10-17 1975-06-07
JPS50116186A (ja) * 1974-02-11 1975-09-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123771A (ja) * 1985-11-22 1987-06-05 Mitsubishi Electric Corp 電界効果型半導体装置
WO2018074228A1 (ja) * 2016-10-18 2018-04-26 株式会社デンソー 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE3038571C2 (de) 1985-11-21
FR2468208A1 (fr) 1981-04-30
FR2468208B1 (ja) 1983-12-30
NL7907680A (nl) 1981-04-22
DE3038571A1 (de) 1981-04-30
US4419681A (en) 1983-12-06
SE8007199L (sv) 1981-04-19
GB2061003A (en) 1981-05-07
CA1155968A (en) 1983-10-25
GB2061003B (en) 1983-08-10
IT1194705B (it) 1988-09-22
IT8025365A0 (it) 1980-10-15

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