DE69228046T2 - Zener-Diode mit Bezugs- und Schutzdiode - Google Patents

Zener-Diode mit Bezugs- und Schutzdiode

Info

Publication number
DE69228046T2
DE69228046T2 DE69228046T DE69228046T DE69228046T2 DE 69228046 T2 DE69228046 T2 DE 69228046T2 DE 69228046 T DE69228046 T DE 69228046T DE 69228046 T DE69228046 T DE 69228046T DE 69228046 T2 DE69228046 T2 DE 69228046T2
Authority
DE
Germany
Prior art keywords
diode
protection
zener
zener diode
protection diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69228046T
Other languages
English (en)
Other versions
DE69228046D1 (de
Inventor
Johannes Hubertus Martin Quint
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69228046D1 publication Critical patent/DE69228046D1/de
Publication of DE69228046T2 publication Critical patent/DE69228046T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
DE69228046T 1991-12-16 1992-12-09 Zener-Diode mit Bezugs- und Schutzdiode Expired - Fee Related DE69228046T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91203310 1991-12-16

Publications (2)

Publication Number Publication Date
DE69228046D1 DE69228046D1 (de) 1999-02-11
DE69228046T2 true DE69228046T2 (de) 1999-07-01

Family

ID=8208077

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69228046T Expired - Fee Related DE69228046T2 (de) 1991-12-16 1992-12-09 Zener-Diode mit Bezugs- und Schutzdiode

Country Status (5)

Country Link
US (1) US5336924A (de)
EP (1) EP0547675B1 (de)
JP (1) JP2678550B2 (de)
KR (1) KR100253951B1 (de)
DE (1) DE69228046T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666743B2 (ja) * 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
US5661069A (en) * 1995-06-06 1997-08-26 Lsi Logic Corporation Method of forming an MOS-type integrated circuit structure with a diode formed in the substrate under a polysilicon gate electrode to conserve space
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US7361406B2 (en) * 2003-04-29 2008-04-22 Qi Wang Ultra-high current density thin-film Si diode
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
JP5671867B2 (ja) * 2010-08-04 2015-02-18 富士電機株式会社 半導体装置およびその製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
JPS54139489A (en) * 1978-04-21 1979-10-29 Hitachi Ltd Zener diode
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
NL7907680A (nl) * 1979-10-18 1981-04-22 Philips Nv Zenerdiode.
NL187942C (nl) * 1980-08-18 1992-02-17 Philips Nv Zenerdiode en werkwijze ter vervaardiging daarvan.
JPS5742978A (en) * 1980-08-28 1982-03-10 Teijin Ltd Hydrophilic treatment of synthetic fiber
FR2501914A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication
GB2113907B (en) * 1981-12-22 1986-03-19 Texas Instruments Ltd Reverse-breakdown pn junction devices
JPS58125875A (ja) * 1982-01-22 1983-07-27 Mitsubishi Electric Corp 定電圧ダイオ−ド
EP0109888A3 (de) * 1982-11-12 1987-05-20 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Vergrabene Zenerdiode
JPS6089921A (ja) * 1983-10-24 1985-05-20 Rohm Co Ltd 半導体装置の製造方法
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions
US4771011A (en) * 1984-05-09 1988-09-13 Analog Devices, Incorporated Ion-implanted process for forming IC wafer with buried-Zener diode and IC structure made with such process
JPS61228677A (ja) * 1985-04-01 1986-10-11 Rohm Co Ltd 半導体装置
US4672403A (en) * 1985-09-23 1987-06-09 National Semiconductor Corporation Lateral subsurface zener diode
JPS6412779A (en) * 1987-07-07 1989-01-17 Pioneer Electronic Corp Information recording and reproducing system
US4857811A (en) * 1988-03-31 1989-08-15 E. I. Du Pont De Nemours And Company Evacuation pump control for a centrifuge instrument
FR2636474B1 (fr) * 1988-09-09 1990-11-30 Sgs Thomson Microelectronics Procede de fabrication d'une diode de regulation et de protection
US4999683A (en) * 1988-12-30 1991-03-12 Sanken Electric Co., Ltd. Avalanche breakdown semiconductor device
JPH02202071A (ja) * 1989-01-31 1990-08-10 Toshiba Corp 半導体受光素子及びその製造方法
JPH05152585A (ja) * 1991-11-27 1993-06-18 Nec Corp 定電圧ダイオード

Also Published As

Publication number Publication date
EP0547675B1 (de) 1998-12-30
EP0547675A2 (de) 1993-06-23
KR930015106A (ko) 1993-07-23
JPH0685290A (ja) 1994-03-25
KR100253951B1 (ko) 2000-04-15
US5336924A (en) 1994-08-09
JP2678550B2 (ja) 1997-11-17
EP0547675A3 (de) 1994-01-26
DE69228046D1 (de) 1999-02-11

Similar Documents

Publication Publication Date Title
DE69420710T2 (de) Verbesserung an einer injektionsvorrichtung
DE69433196D1 (de) Abtastelement mit Stosschutz
DE69308051T2 (de) Schutzdiodennetz bildende integrierte Schaltung
DE69325241T2 (de) Überspannungsschutzeinrichtung
DE69302205T2 (de) Korrosionsschutz mit Cu-BTA
DE69228046D1 (de) Zener-Diode mit Bezugs- und Schutzdiode
DE69215442T2 (de) Überspannungschutzvorrichtung und -system
DE69400926T2 (de) Bewahrungsvorrichtung mit einer Sicherheitsfunktion
DE69403001D1 (de) Überspannungsschutzvorrichtung
DE69306221D1 (de) Elektronischer Auslöser mit Erdschutz
DE69220669D1 (de) Karde mit schutzeinrichtung
DK174991D0 (da) Beskyttelseshaette
DE69222693D1 (de) Überspannungsdetektor mit Hysterese
DE59409641D1 (de) Überspannungsschutzelement
DE9311371U1 (de) Kleidungsstück mit Protektor
DE9319287U1 (de) Überspannungsschutzgerät
DE9317266U1 (de) Schutzvorrichtung an einer Arbeitsplatte
NO922839L (no) Beskyttelseskappe
KR950016119U (ko) 저항체 보호용 케이스
KR940021527U (ko) 저항체 보호용 케이스
ATA110492A (de) Schutzbeschlag
KR940004553U (ko) 퓨즈기능을 가진 낙뢰 방지용 저항
BR9102060A (pt) Prota-copos e similares
FI913977A0 (fi) Ylitäyttösuoja
BR7101330U (pt) Protecao multipla

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee